Samsung Electronics Co., Ltd.

Kyounghwan Yeo

Heonjong Shin

Keunhee Bai

Hagju Cho

Seungseok Ha

Eunsil Park

Byungjae Park

A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

Semiconductor devices having a spacer on an isolation region

Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

Semiconductor devices including a gate core and a fin active core and methods of fabricating the same

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Seoul, South Korea

Kyounghwan Yeo