Samsung Electronics Co., Ltd.

Kyounghee Kim

Dongsoo Woo

Munjun Kim

Kyosuk Chae

Junkwan Kim

Jinseong Lee

A semiconductor device includes: a lower structure including a device and a lower wiring structure; an insulating layer on the lower structure; a via penetrating the insulating layer; a wiring pattern on the insulating layer and the via; and a silicon oxide layer covering the wiring pattern, and including hydrogen, wherein the wiring pattern includes first and second conductive layers, an upper surface protective layer, and a side surface protective layer, wherein the second conductive layer is on the first conductive layer, wherein the upper surface protective layer covers an upper surface of the second conductive layer, and the side surface protective layer covers side surfaces of the first and second conductive layers, and wherein each of the upper surface protective layer and the side surface protective layer includes a metal material having an activation energy higher than that of a metal material of the second conductive layer.

Semiconductor devices having a wiring provided with a protective layer

A semiconductor device including a cell active pattern; a cell gate structure connected to the cell active pattern; a peripheral active pattern; a peripheral gate structure connected to the peripheral active pattern; a conductive pattern connected to the peripheral active pattern, the cell gate structure, or the peripheral gate structure; a capacitor structure electrically connected to the cell active pattern; an interlayer insulating layer surrounding the capacitor structure; and a peripheral contact connected to the conductive pattern while extending through the interlayer insulating layer, wherein the interlayer insulating layer includes a first material layer contacting the capacitor structure, and a second material layer on the first material layer, the peripheral contact includes a first portion contacting the first material layer, and a second portion contacting the second material layer, and a maximum width of the first portion is greater than a minimum width of the second portion.

Growing community of inventors

Hwaseong-si, South Korea

Kyounghee Kim