Samsung Electronics Co., Ltd.

Kyoungha Eom

Hyunchul Lee

Sanggyo Chung

Jiseung Lee

In a method of cutting a fine pattern, a line structure is formed on a substrate. The line structure extends in a first direction, and includes a pattern and a first mask. The pattern and the first mask include different materials. A sacrificial layer is formed on the substrate to cover the line structure. The sacrificial layer is partially etched to form a first opening partially overlapping the line structure in a vertical direction. A portion of the first mask, an upper portion of the pattern and/or a portion of the sacrificial layer under the first opening are partially etched using an etching gas having no etching selectivity among the pattern, the first mask and the sacrificial layer. A lower portion of the pattern under the upper portion thereof is removed to divide the pattern into a plurality of pieces spaced apart from each other in the first direction.

Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same

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Yongin-si, South Korea

Kyoungha Eom