Ixys Corporation

Kyoung-Wook Seok

Vladimir Tsukanov

A trench structure of an insulated gate bipolar transistor (IGBT) is formed as a trench net in a P region and extends into an N&#x2212; layer. The trench net separates the P region into P wells and floating P layers. The P wells contact an emitter electrode while the floating P layers are not in direct contact with the emitter electrode. A gate formed of conductive material and having a surrounding insulation oxide layer is formed in the trench net. An N+ layer may be formed above each floating P layer under the gate. The floating P layers are isolated from the gate and are also not connected to the emitter electrode.

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Milpitas, CA, United States of America

Kyoung-Wook Seok