Lg Chem, Ltd

Electronics and Telecommunications Research Institute

Kyoung Wan Park

Seong Jae Lee

Seong Bae Kim

Eun Hee Kim

Hyun Uk Kim

Yi Rang Lim

Min Cheol Shin

Young Su Park

Chang Jun Moon

Hong Kyu Park

Wonju Cho

Sang Soo Jang

Moon Gyu Jang

Sang Chul Oh

Moon Ho Park

Song Yi Yang

Hyeon Jin Kim

Ju Han Yoon

Won Ju Cho

Cho Hee Hwang

An apparatus for cleaning a metal filter comprises a cleaning bath having a predetermined size and connected to a cleaning solution tank, a jig which is vertically elevatable and horizontally slidable in the cleaning bath and to which the metal filter is fixed, a nozzle mounted so that a discharge hole thereof is faced upward in the cleaning bath, and a controller which controls supply and blocking of a cleaning solution from the cleaning solution tank to the cleaning bath, controls supply and blocking of compressed air or the water to the nozzle, controls movement of the jig, and controls filling or discharging of the water into/from the cleaning bath. The controller controls the movement of the jig and selectively controls the supply and blocking of the water, the cleaning solution, and the compressed air, and the draining of the cleaning bath according to predetermined logic.

Apparatus and method for cleaning metal filter

A method of preparing a positive electrode active material precursor includes forming positive electrode active material precursor particles while adding a reaction solution including a transition metal-containing solution, an ammonium ion-containing solution, and a basic aqueous solution to a reactor with a filtration device installed therein. The method further includes performing continuous concentration in which the reaction solution is added while continuously discharging a portion of the reaction solution in the reactor out of the reactor using the filtration device when the reactor is full, wherein a concentration of a solid content in the reactor is increased at a constant rate.

Positive electrode active material precursor for lithium secondary battery, and method of preparing the same

A method of preparing a bimodal positive electrode active material precursor and a positive electrode active material prepared from the same are disclosed herein. In some embodiments, the method includes inputting a first reaction source material including a first aqueous transition metal solution into a reactor, precipitating at pH 12 or more to induce nucleation of a first positive electrode active material precursor particle, and at less than pH 12 to induce growth of the same, inputting a second reaction source material including a second aqueous transition metal solution into the reactor containing the first positive electrode active material precursor particle, precipitating at pH 12 or more to induce the nucleation of a second positive electrode active material precursor particle, and at less than pH 12 to induce simultaneous growth of the first and second positive electrode active material precursor particles, thereby preparing a bimodal positive electrode active material precursor.

Positive electrode active material precursor and preparation method of positive electrode active material precursor

A cleaning method according to the present invention comprises mounting the metal filter on a jig that is vertically elevatable and horizontally slidable in a cleaning bath so that the opening is faced downward, descending the jig so that a first nozzle installed in the cleaning bath enters the opening, injecting a predetermined amount of water and a cleaning solution into the cleaning bath so that the metal filter is immersed, spraying compressed air through the first nozzle to discharge bubbles of the compressed air toward an inner surface of the metal filter, draining the cleaning bath, spraying water through a second nozzle to remove the cleaning solution from the metal filter, and spraying the compressed air through the first nozzle to dry the metal filter. An apparatus for cleaning a metal filter is also disclosed.

Provided is an apparatus for producing a positive electrode active material precursor. The apparatus includes: a reactor into which a reaction solution is introduced; a stirrer being inserted into the reactor and stirring the reaction solution; and a filter type baffle being inserted into the reactor and including a filter.

Apparatus and method for producing positive electrode active material precursor

A method for preparing a positive electrode active material precursor includes preparing a metal aqueous solution including a nickel raw material, a cobalt raw material, and a manganese raw material (step 1); adding the metal aqueous solution, an ammonium cation complex forming agent, and a basic aqueous solution into a reactor, co-precipitating the mixture at pH 11 to less than pH 12 to form nuclei of first positive electrode active material precursor particles and growing the nuclei (step 2); adjusting input amount of the basic aqueous solution to increase the pH in the reactor to a range of 0.8 to 1.5 compared to that of step 2; and adjusting input amount of the basic aqueous solution to change the pH in the reactor to pH 11 to less than pH 12 (step 4). A positive electrode active material precursor prepared by the above preparation method has an improved packing density.

Method for preparing positive electrode active material precursor for lithium secondary battery

A positive electrode active material precursor having a uniform particle size distribution and represented by Formula, wherein a percentage of fine powder with an average particle diameter (D) ofμm or less is generated when the positive electrode active material precursor is rolled atkgf/cmis less than%, and an aspect ratio isor more, and a method of preparing the positive electrode active material precursor[NiCoMM  [Formula]

A co-precipitation reactor with a continuous filtering system mounted, wherein the co-precipitation reactor includes a main body accommodating a reactant for reaction therein, an input unit inputting the reactant into the main body, and a filter unit installed in the main body to filter a precursor of the precursor generated by reacting with the reactant in the main body and a reaction solution.

Co-precipitation reactor

The present invention relates to a method of manufacturing a nano transistor. The present invention manufactures the nano transistor without changing a conventional method of forming the nano transistor formed on a SOI substrate. Further, the present invention includes forming a N well and a P well at giving regions of an underlying silicon substrate so that a given voltage can be individually applied to a NMOS transistor and a PMOS transistor. Therefore, the present invention can control the threshold voltage to prevent an increase of the leakage current.

Method of manufacturing nano transistors

The present invention relates to an ultra small size vertical MOSFET device having a vertical channel and a source/drain structure and a method for the manufacture thereof by using a silicon on insulator (SOI) substrate. To begin with, a first silicon conductive layer is formed by doping an impurity of a high concentration into a first single crystal silicon layer. Thereafter, a second single crystal silicon layer with the impurity of a low concentration and a second silicon conductive layer with the impurity of the high concentration are formed on the first silicon conductive layer. The second single crystal silicon layer and the second silicon conductive layer are vertically patterned into a predetermined configuration. Subsequently, a gate insulating layer is formed on entire surface. Then, an annealing process is carried out to diffuse the impurities in the first silicon conductive layer and the second silicon conductive layer into the second single crystal layer, thereby forming a source contact, a drain contact and a vertical channel. Finally, a gate electrode is formed on side walls of the vertical channel.

Ultra small size vertical MOSFET device and method for the manufacture thereof

The present invention relates to an ultra small size vertical MOSFET device having a vertical channel and a source/drain structure and a method for the manufacture thereof by using a silicon on insulator (SOI) substrate. To begin with, a first silicon conductive layer is formed by doping an impurity of a high concentration into a first single crystal silicon layer. Thereafter, a second single crystal silicon layer with the impurity of a low concentration and a second silicon conductive layer with the impurity of the high concentration are formed on the first silicon conductive layer. The second single crystal silicon layer and the second silicon conductive layer are vertically patterned into a predetermined configuration. Subsequently, a gate insulating layer is formed on entire surface. Then, an annealing process is carried out to diffuse the impurities in the first silicon conductive layer and the second silicon conductive layer into the second single crystal layer, thereby forming a source region, a drain region and a vertical channel. Finally, a gate electrode is formed on side walls of the vertical channel.

A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, and source and drain electrodes. The plurality of quantum dot tunnel-junction arrays include at least two tunnel-junctions, are parallelly coupled to each other, and are well separated from each other to prevent single-electron tunneling between them. One of the plurality of quantum dot tunnel-junction arrays includes the gate electrode, and the voltage applied to the gate electrode can vary the number of electron-hole pairs. Each of the above-mentioned plurality of quantum dot tunnel-junction arrays includes separate source and drain electrodes where voltages are applied

Single-electron memory device using an electron-hole coulomb blockade

The present invention is to fabricate SOI wafer whose the silicon layer is very uniform and the impurity concentration is low. The insulating layer, that is, a composite layer of SiO2 and silicon, is grown on oxide substrate by means of a molecular beam epitaxy fabricating method using silicon as an original material in the oxygen atmosphere. The composite layer of the oxide and silicon is grown according to gradual decreasing the pressure of oxygen atmosphere. A top silicon layer of uniform thickness is grown by means of a molecular beam epitaxy fabricating method using only silicon material consecutively on the composite layer.

Method of fabricating SOI wafer

The present invention discloses a technique for applying diffraction characteristic of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. A quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristic of electrons by interposing a reflection-type diffraction grating in an electron path. The inventive multi-functional quantum diffraction transistor uses a two dimensional electron gas in formed at a different species junction in a semiconductor heterostructure, and has a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating. The quantum diffraction effect of the electrons is used for the control of the diffracted drain current.

Quantum diffraction transistor

The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristics of electrons by interposing a reflection-type diffraction grating in a bent electron path. In the inventive multi-functional quantum diffraction transistor using a two dimensional electron gas in quantum well structure formed at a different species junction in a heterostructure semiconductor device and having a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating, the quantum diffraction effect of the electrons is used for the control of the diffracted drain current.

Growing community of inventors

Taejon, South Korea

Kyoung Wan Park