Samsung Electronics Co., Ltd.

Kyoung-taek Kim

Hyun-Woo Kim

Shi-Yong Yi

Dong-Ki Yoon

Hyun-woo Kim

Yool Kang

Seong-woon Choi

Hai-sub Na

Weoun-ju Kim

Hak-won Kim

A photoacid generator represented by Formula 1 or Formula 2: wherein R, R, and Rare each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S, and at least one CHgroup in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R&#x2014;SA, where Ris a C1-C10 alkyl group, and Ais a counter-ion.

Photoacid generator, chemically amplified resist composition including the same, and associated methods

For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.

Method of fine patterning semiconductor device

Growing community of inventors

Incheon, South Korea

Kyoung-taek Kim