Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Kyoung-Sun Kim

Sung-joo Park

Jea-Eun Lee

Jung-Joon Lee

Young-ho Lee

Do-Hyung Kim

Yong-jin Kim

Jong-min Kim

Woo-Jin Kim

Jung-Hyeon Kim

Do-hyung Kim

Hyo-Jae Bang

Yang-Ki Kim

Hyun-Seok Choi

Yong-Hyun Kim

Ken Tokashiki

Jong-hyun Seok

Jung-Chan Cho

Yang-Je Lee

Jae-Sang Baik

A printed circuit board (PCB) includes a first insulating layer, a pad disposed on the first insulating layer, and a first reference layer on which the first insulating layer is disposed, the first reference layer including a dielectric passage for forming a return path of a signal that is transmitted to the pad, and a conductive line disposed in the dielectric passage and disposed to form a transmission path of the signal. The PCB further includes a second insulating layer on which the first reference layer is disposed, and a second reference layer on which the second insulating layer is disposed, the second reference layer further forming the return path. A capacitance of the pad corresponds to a distance between the pad and the second reference layer.

Printed circuit board, memory module and memory system including the same

In a method of manufacturing a MRAM device, a lower electrode is formed on a substrate. A first magnetic layer, a tunnel barrier layer, and a second magnetic layer are sequentially formed on the lower electrode layer. An etching mask is formed on the second magnetic layer. An ion beam etching process in which a first ion beam and a second ion beam are simultaneously emitted onto the substrate is performed to form a MTJ structure including a first magnetic layer pattern, a tunnel layer pattern, and a second magnetic layer pattern from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer, respectively, the MTJ structure has no by-products remaining after the ion beam etching process is performed.

Methods of manufacturing a magnetoresistive random access memory device

A printed circuit board (PCB) includes a substrate body including a circuit wiring layer; tap terminals provided at a surface of the substrate body and in a peripheral region of the substrate body and electrically connected to the circuit wiring layer; and plating wires corresponding to respective tap terminals, each plating wire extending from an end portion of its respective tap terminal toward an edge of the substrate body and having a line width smaller than a line width of the tap terminal. For at least a first tap terminal, the tap terminal shares an edge with an edge of its respective plating wire. A second tap terminal adjacent the first tap terminal is positioned outside a circle having a radius that equals a length of the plating wire and having a center at a point along the shared edge where the plating wire and first tap terminal connect.

Printed circuit board having terminals

A data receiver includes a first buffer circuit and a second buffer circuit. The first buffer circuit varies a resistance of a data path and a resistance of a reference voltage path based on a plurality of control signals, and adjusts a voltage level of an input data signal and a level of a reference voltage to generate an internal data signal and an internal reference voltage based on the varied resistance of the data path and the varied resistance of the reference voltage path. The second buffer circuit compares the internal data signal with the internal reference voltage to generate a data signal.

Data receiver, semiconductor device and memory device including the same

A memory module, includes a memory module board and a plurality of memory devices on the memory module board. The memory module board includes one or more first input terminals configured to receive first signals to individually control the memory devices, and one or more second input terminals configured to receive second signals to commonly control the memory devices. Each of the memory devices includes a plurality of first signal input units configured to receive the first signals through one or more first input pins, a plurality of second signal input units configured to receive the second signals through one or more second input pins, and a plurality of dummy units, the dummy units being respectively connected to the first signal input units in parallel, and being configured to receive the first signals through one or more third input pins and to compensate for a signal line load.

Memory module

A method of forming an integrated circuit module may include interposing an auxiliary PCB between at least one semiconductor chip and a main PCB, the auxiliary PCB having at least one circuit pattern for electrical connection to one of the semiconductor chip and at least one circuit pattern formed on the main PCB.

Integrated circuit module and method of forming the same

A stacked semiconductor module, a method of fabricating the same, and an electronic system using the module are provided. A first semiconductor module having a plurality of semiconductor devices mounted on a rigid printed circuit board (PCB) and a second semiconductor module having a plurality of other semiconductor devices mounted on a flexible PCB are provided. On the rigid PCB a number L of first tabs may be disposed on a first surface, and a number K of second tabs may be disposed on a second surface of the rigid PCB. The flexible PCB may have a number M of third tabs on a third surface, and a number N of fourth tabs on a fourth surface of the flexible PCB. The second tabs may be combined with the third tabs using a conductive adhesive. The third tabs may be electrically connected to corresponding ones of the second tabs.

Stacked semiconductor module, method of fabricating the same, and electronic system using the same

A memory module socket disposed on a principal surface of a mainboard, and adapted to mechanically receive and electrically connect a memory module with a mainboard, the memory module socket including a first unit socket having a plurality of first socket pins adapted to electrically connect a first connector disposed on an edge of the memory module, and a second unit socket having a plurality of second socket pins adapted to electrically connect to a second connector disposed on the memory module orthogonal to the first connector, wherein the memory module as installed in the memory module socket is parallel to the principal surface of the mainboard.

Growing community of inventors

Uijeongbu-si, South Korea

Kyoung-Sun Kim