Lg Innotek Co., Ltd.

Sungkyunkwan University

Kyoung Seok Min

Byung Sook Kim

Jung Eun Han

Dong Geun Shin

Bum Sup Kim

Seo Yong Ha

A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Silicon carbide powder, method for manufacturing the same and method for growing single crystal

A method of preparing silicon carbide powder is provided, which includes mixing first silicon carbide powder with a liquid silicon carbide precursor, annealing the mixture at a first temperature and converting the silicon carbide precursor to a &#x3b2;-phase silicon carbide particulate material, and annealing the material at a second temperature and grain-growing the first silicon carbide powder to second silicon carbide powder using the &#x3b2;-phase silicon carbide particulate material.

Method of preparing silicon carbide powder comprising converting a liquid SiC precursor to a B-phase SiC particulate material

A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 &#x3bc;m and less than 45 &#x3bc;m with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 &#x3bc;m and less than 75 &#x3bc;m with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 &#x3bc;m and less than 110 &#x3bc;m with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

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Seoul, South Korea

Kyoung Seok Min