Skhynix Inc.

Kyoung Ryul Yoon

Se Hun Kang

Seung Wook Ryu

Ki Vin Im

Wan Joo Maeng

Hyun Soo Jin

A memory device including a substrate; a bit line laterally oriented to be parallel to the substrate; a transistor including two channels that are laterally oriented from the bit line and a word line that is vertically oriented and surrounds the two channels; and a capacitor laterally oriented from the transistor.

Memory cell and memory device with the same

A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Growing community of inventors

Gyeonggi-do, South Korea

Kyoung Ryul Yoon