Samsung Electronics Co., Ltd.

Kyoung-Pil Park

In-hwan Kim

Jeong-Hoon Ahn

Sang-chul Lee

Joon-Nyung Lee

Jun-Jung Kim

Yeon-Joo Kim

Jin-Hyeung Park

Hyo-Seon Lee

In a method of forming a wiring structure, a first mask having a first opening including a first portion extending in a second direction and a second portion extending in a first direction is formed. A second mask including a second opening overlapping the first portion of the first opening and third openings each overlapping the second portion of the first opening is designed. The second mask is fabricated to include a fourth opening by enlarging the second opening. The fourth opening overlaps a boundary between the first and second portions of the first opening. An insulating interlayer is etched using the first and second masks to form first and second via holes corresponding to the fourth and third openings, and a trench corresponding to the first opening. First and second vias and a wiring are formed to fill the first and second via holes and the trench.

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

Growing community of inventors

Goyang-si, South Korea

Kyoung-Pil Park