Skhynix Inc.

Kyoung-Oug Ro

Do-Hwan Kim

Jong-Chae Kim

Il-Ho Song

Yeoun-Soo Kim

Jong-Hyun Je

Chung-Seok Choi

Jang-Won Moon

An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

Image sensor and method for fabricating the same

An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.

An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

Isolation structure having a second impurity region with greater impurity doping concentration surrounds a first impurity region and method for forming the same, and image sensor including the isolation structure and method for fabricating the image sensor

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Gyeonggi-do, South Korea

Kyoung-Oug Ro