Samsung Electronics Co., Ltd.

Kyoung-Min Kim

Young-Ho Kim

Jae-Ho Kim

Myung-Sun Kim

Seok Min Han

Ho-Sung Song

Boo-deuk Kim

Jeong-Sik Nam

Tae-Hyeong Lee

Kyung-Duk Kim

A semiconductor device structure, including integrated circuits of semiconductor chips and scribe lanes between the regions in which the circuits have been formed, has at least one redistribution pad disposed in one of the scribe lanes for simultaneously testing a group of the integrated circuits, and a metal interconnection structure disposed beneath the redistribution pad(s). The metal interconnection structure includes at least conductive via contacting the redistribution pad at the bottom of the pad. The conductive via(s) is/are arranged so that at least a portion of each via remains attached to the redistribution pad when the structure is sawed along the scribe lane.

Scribe lane structure in which pad including via hole is arranged on sawing line

In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Method of forming a pattern and method of manufacturing a capacitor

In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Method of forming a pattern and method of manufacturing a capacitor using the same

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Gyeonggi-do, South Korea

Kyoung-Min Kim