Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Kyoung-Kook Kim

Young-Soo Park

June-o Song

Tae-yeon Seong

Dong-seok Leem

Tae-Yeon Seong

Taek Jung Kim

June-O Song

Woong-Ki Hong

June-O Gwangju Institute Of Sci & Tech Song

Jun-Youn Kim

Su-Hee Chae

Jae-Chul Park

Moon-Seung Yang

Hyung-Su Jeong

Tae-Yeon Gwangju Institute Of Sci & Tech Seong

Dong-Seok Gwangju Institute Of Sci & Tech Leem

Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Flip-chip light emitting diodes and method of manufacturing thereof

Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Top-emitting light emitting diodes and methods of manufacturing thereof

Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Growing community of inventors

Siheung, South Korea

Kyoung-Kook Kim