Samsung Display Co., Ltd.

Applied Materials, Inc.

Kyoung-Jae Chung

Seung-Ha Choi

Woo-Geun Lee

Hye-Young Ryu

Young-Joo Choi

Do-Hyun Kim

Ki-Won Kim

Young-Wook Lee

Kap-Soo Yoon

Pil-Sang Yun

Je-Hun Lee

Jae-Hyoung Youn

Dong-Ju Yang

Dong-Hoon Lee

Chang-Oh Jeong

Bon-Woong Koo

Jin-Won Lee

Jin Young Choi

Suk-Won Jung

Hee-Jun Byeon

Yong-Seok Hwang

June Young Kim

An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.

Toroidal motion enhanced ion source

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Thin film transistor panel having an etch stopper on semiconductor

Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.

Method of manufacturing a display substrate using two etch masks

A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.

Thin film transistor display panel and manufacturing method of the same

A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

Thin film transistor array substrate and method of fabricating the same

Disclosed are a thin film transistor and a method of forming the thin film transistor, wherein the thin film transistor includes a gate electrode, an oxide semiconductor pattern, a first gate insulating layer pattern interposed between the gate electrode and the oxide semiconductor pattern, wherein the first gate insulating layer pattern has an island shape or has two portions of different thicknesses from each other, a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern, wherein the source electrode and the drain electrode are separated from each other, and a first insulating layer pattern placed between the source electrode and drain electrode and the oxide semiconductor pattern, wherein the first insulating layer pattern partially contacts the source electrode and drain electrode and the first gate insulating layer pattern, and wherein the first insulating layer is enclosed by an outer portion.

Thin film transistor and method of forming the same

Display substrate, display device, and method of manufacturing the display substrate

A display substrate includes a gate wire formed on an insulating substrate, a semiconductor pattern formed on the gate wire and containing a metal oxynitride compound, and a data wire formed on the semiconductor pattern to cross the gate wire. The semiconductor pattern has a carrier number density ranging from 10/cmto 10/cm.

Display substrate and method of manufacturing the same

A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer disposed on the gate line; an semiconductive oxide layer disposed on the gate insulating layer; a data line disposed on the semiconductive oxide layer and including a source electrode; a drain electrode facing the source electrode on the semiconductive oxide layer; and a passivation layer disposed on the data line. The semiconductive oxide layer is patterned with chlorine (Cl) containing gas which alters relative atomic concentrations of primary semiconductive characteristic-providing elements of the semiconductive oxide layer at least at a portion where a transistor channel region is defined.

Thin film display panel and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Kyoung-Jae Chung