Skhynix Inc.

Postech Academy-industry Foundation

Dong-a University Research Foundation for Industry-academy Cooperation

Kyoung In Lee

Sung Kun Park

Sung Joo Hong

Sun Ho Oh

Hoon Sang Oh

Min Hee Cho

Won Jun Lee

Yu Jin Park

Sung Wook Cho

Young Woong Do

Heon Joon Kim

Hae Wook Han

Won Jin Kim

Youngwoong Do

Sang Dong Yoo

Ho Ryeong Lee

Cha Young Lee

Yun Kyung Kim

An image sensing device includes a plurality of pixel groups, each pixel group including first to fourth unit pixels that are configured to respond to incident light and generate electrical signals, and wherein each of the first to fourth unit pixels of a pixel group includes optical filters operable to transmit incident light corresponding to a same color, wherein the first unit pixel and the second unit pixel that are included in the pixel group are located adjacent to each other and include portions of a first microlens, and wherein a light reception area of the third unit pixel of the pixel group has a size smaller than a size of a light reception area of the fourth unit pixel of the pixel group.

Image sensing device

An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

An image sensing device is provided to include: a substrate including a photoelectric conversion layer configured to generate photocharges corresponding to the intensity of incident light; a plurality of doping regions disposed along a migration path of the photocharges and doped with dopants in different doping concentrations; and a gate dielectric layer disposed over the substrate and having a gate dielectric layer portion overlapping the plurality of doping regions, the gate dielectric layer portion having a varying thickness that increases along the migration path of the photocharges.

Image sensing device with gate dielectric portion varying thickness that increases along migration path of photocharges

An image sensing device includes a pixel array including a plurality of pixels, each of pixels configured to generate a pixel signal corresponding to intensity of incident light, and a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels and configured to include an air layer so as to optically isolate the adjacent pixels. Each of the grid structures includes regions that form a cross shape.

An image sensing device includes a pixel array including a (2&#xd7;2) array that includes two first pixels, a second pixel, and a third pixel, wherein the first to third pixels have a pixel area and include first to third optical filters that are configured to transmit light of different colors, respectively, and wherein the second pixel or the third pixel includes a grid structure located along a boundary of the second pixel or the third pixel, and wherein the first pixel includes a red optical filter and has a first light reception area that is greater than a second light reception area of the second pixel or a third light reception area of the third pixel.

An image sensing device includes a first impurity region, a second impurity region, a floating diffusion region, and a transfer gate. The first impurity region is disposed in a semiconductor substrate and includes impurities with a first doping polarity, and the first impurity region generates photocharges by performing photoelectric conversion in response to incident light. The second impurity region is disposed over the first impurity region and has impurities with a second doping polarity different from the first doping polarity, and the second impurity region contacts with on some portions of the first impurity region. The floating diffusion region disposed over the second impurity region. The transfer gate couples to the floating diffusion region and transmits photocharges generated by the first impurity region to the floating diffusion region. The first impurity region is arranged not in contact with the transfer gate.

An image sensing device includes a first sub-pixel array including a plurality of unit pixels having a first color arranged adjacent to each other, a second sub-pixel array including a plurality of unit pixels having a second color arranged adjacent to the first sub-pixel array in a first direction, a third sub-pixel array including a plurality of unit pixels having a third color arranged adjacent to the second sub-pixel array in a second direction perpendicular to the first direction, and a fourth sub-pixel array including a plurality of unit pixels having the second color arranged adjacent to the first sub-pixel array and the second sub-pixel array in the second direction. The fourth sub-pixel array includes a plurality of phase detection pixels for detecting a phase difference in at least the first direction.

An image sensing device to control flow of photocharges using a new method is disclosed. The image sensing device includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion (FD) region formed apart from the photoelectric conversion region, a vertical pillar formed between the photoelectric conversion region and the floating diffusion region to transfer the photocharges from the photoelectric conversion region to the floating diffusion (FD) region, and a switching element located between the photoelectric conversion region and the floating diffusion (FD) region.

An image sensor includes a pixel array in which auto-focus (AF) pixels and image capture pixels are arranged. Wherein at least one of the AF pixels comprises: a color filter layer; and first and second microlenses arranged over the color filter layer, and formed in a region of the at least one AF pixel in a widthwise direction of the color filter layer.

Image sensor having dual microlenses for each auto-focus (AF) pixel

An image sensor includes a color filter configured to pass a specific color of light; a micro lens formed under the color filter and configured with a plurality of layers in which an upper layer has a smaller area than a lower layer; and a photo device formed under the micro lens and configured to receive light passing through the micro lens and convert the received light into an electrical signal.

Growing community of inventors

Icheon-si, South Korea

Kyoung In Lee