Skhynix Inc.

Dong-A University Research Foundation for Industry-Academy Cooperation

Kyoung-In Lee

Won-Jun Lee

Sung-Kun Park

Cha-Young Lee

Min-Su Cho

Sung-Wook Cho

Sun-Ho Oh

Yun-Kyung Kim

Kwang Hwangbo

Hoon-Sang Oh

Kyungdong Yoo

Sung-Joo Hong

An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Image sensor having P-type isolation structure

An image sensor image sensor may include: a substrate; photo-sensing elements formed in the substrate, each photo-sensing element responsive to light to produce a photo-sensing electrical signal; an antireflection layer formed over of the photo-sensing elements and structured to reduce optical reflection to facilitate optical transmission of incident light to the photo-sensing elements through the antireflection layer; color filters formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, each color filter structured to select a designated color in the incident light to transmit through to a corresponding photo-sensing element; and partition patterns formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, to partition light receiving area above the photo-sensing elements into separate light receiving areas, each partition pattern surrounding a corresponding color filter to be separate from an adjacent color filter; grooves formed in upper portions of the partition patterns, and providing air gaps between the adjacent partition patterns; micro lenses formed over the partition patterns and the color filters to direct incident light to the photo-sensing elements through the color filters, respectively. The micro lenses may be separated from one another by the grooves.

Image sensor including partition patterns

An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Image sensor including active regions

Disclosed is an image sensor having a plurality of groups of pixels, each group of pixels including: first to third image detection color filter sets and a phase difference detection color filter set, which are arranged in a matrix with rows and columns. The phase difference detection color filter set comprises first to fourth phase difference detection color filter pairs arranged in a matrix with rows and columns. The first to fourth phase difference detection color filter pairs comprise first to fourth left phase difference detection color filters positioned on the left of each of the first to fourth phase difference detection color filter pairs and first to fourth right phase difference detection color filters positioned on the right of each of the first to fourth phase difference detection color filter pairs, respectively.

Image sensor having two-colored color filters sharing one photodiode

An image sensing device is provided to include organic and inorganic photosensing regions. The organic photosensing region includes an organic material and provides a first image signal generated in response to light incident on the organic photosensing region. The inorganic photosensing region includes an inorganic material and provides a second image signal generated in response to light incident on the inorganic photosensing region. The image sensing device further includes: top and bottom electrodes formed on opposite sides of the organic photosensing region, a first storage region disposed relative to the organic photosensing region and storing the first image signal, a second storage region disposed relative to the inorganic photosensing region and storing the second image signal, and a logic circuit disposed to receive the first image signal and the second image signal and processing at least one of the first image signal or the second image signal.

Image sensing device having organic pixel array and inorganic pixel array

An image sensor device includes a photoelectric conversion element configured to receive incident light and generate photocharges in response to the received incident light; a floating diffusion coupled to the photoelectric conversion element to store the photocharges generated by the photoelectric conversion element, the floating diffusion having a first capacitance value; a conductive pattern electrically coupled to the floating diffusion; and a variable electrode located apart from the conductive pattern by a gap, wherein the conductive pattern and the variable electrode form a variable capacitor coupled to the floating diffusion and having a second capacitance value and operable to change an effective capacitance of the floating diffusion in response to a control signal applied to the variable electrode.

Image sensor

Disclosed is an image sensor device including a pixel array in which a plurality of pixel blocks are arranged. Each of the pixel blocks may include: a light receiver comprising a floating diffusion and a plurality of unit pixels and configured to receive incident light and generate photo charges in response to the received incident light, the plurality of unit pixels sharing the floating diffusion; a first driver located at a first side of the light receiver and comprising a driver transistor; a second driver located at a second side of the light receiver and comprising a reset transistor; and a conductive line having a first region coupling the driver transistor to the floating diffusion and a second region coupling the floating diffusion to the reset transistor, wherein the driver transistor and the reset transistor are respectively located the first side and the second side of the light receiver in a diagonal direction.

An image sensor is provided. The image sensor may include a photodiode formed in a substrate; a light refraction pattern formed on the photodiode; a color filter covering the light refraction pattern; and a micro-lens formed on the color filter.

Image sensor having light refractive patterns

An image sensor may include: a substrate including a substrate comprising a photoelectric conversion element; a pixel lens formed over the substrate and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer; a color filter layer covering the pixel lens; and an anti-reflection structure formed over the color filter layer.

Image sensor and electronic device having the same

This technology provides an image sensor and an electronic device including the same. In an image sensor including a pixel array including a plurality of unit pixels, each of the plurality of unit pixels may include a photoelectric conversion element and a pixel lens over the photoelectric conversion element and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer, wherein the pixel lens has a shape changing based on a position of a corresponding unit pixel from a center of the pixel array to an edge of the pixel array.

Image sensor and electronic device including the same

Provided are an image sensor, a method of manufacturing the image sensor, and an electronic device including the image sensor. An image sensor according to an embodiment may include a photoelectric conversion element, a pixel lens formed over the photoelectric conversion element and comprising a plurality of light condensing layers, wherein an upper layer of plurality of light condensing layers has a smaller area than a lower layer, and the pixel lens comprises a color filter substance.

Image sensor, method of manufacturing the image sensor, and electronic device including the image sensor

Disclosed are an image sensor including a light collection member having a multi-layer step shape and an electronic device including the same. This technology can improve light condensing efficiency in a unit pixel since a corresponding pixel lens is included. Furthermore, light condensing efficiency in a unit pixel can be improved more effectively by controlling the width of a corresponding pixel lens so that the pixel lens corresponds to the wavelength of incident light whose color has been separated by a corresponding color filter. As described above, quantum efficiency in the photoelectric conversion element can also be improved since light condensing efficiency in a unit pixel is improved. As a result, performance of the image sensor can be improved.

Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include a photoelectric conversion element formed in a substrate; a transfer gate formed over the photoelectric conversion element, formed over a first surface of the substrate and having at least one through hole, wherein the through hole passes through the transfer gate; a floating diffusion layer formed over the transfer gate; a channel structure formed in the through hole and electrically coupling the photoelectric conversion element to the floating diffusion layer in response to a signal applied to the transfer gate; and a capacitor formed over the floating diffusion layer.

Growing community of inventors

Gyeonggi-do, South Korea

Kyoung-In Lee