Electronics and Telecommunications Research Institute

Kyoung-Ik Cho

Yoon-Ho Song

Jin-Ho Lee

Mun-Cheol Paek

Chi-Sun Hwang

Sung-Yool Choi

Jeen Hur

Moon-Youn Jung

Seung-Youl Kang

Young-Rae Cho

Gi-Pyung Han

Do-Hyung Kim

In-Kyu You

Kyung-Ho Lee

Byoung-Gon Yu

Won-Jae Lee

Hyung-Joun Yoo

Sang-gi Kim

Yil-Suk Yang

Jin-gun Koo

Jong-dae Kim

Dae-woo Lee

Ho-Young Kim

Kyu-Hwan Shim

Eun-Soo Nam

Yong-Tak Lee

Tae-moon Roh

There is provided a millimeter wave band frequency optical oscillator predicted to be used as a millimeter wave oscillating frequency signal source in a base station of a millimeter wave wireless transmission system. The optical oscillator has a double resonator structure in which a pair of wavelength tunable fiber grating mirrors are inserted into a unilateral fiber-ring laser resonator in order to internally and additionally form a linear laser resonator. The double resonator structure composed of the two stable laser resonators can oscillate laser of two modes. Due to a beat phenomenon occurring between the two modes, received laser is modulated to an ultra-speed frequency of 60 GHz or greater. A variation in the gain within a resonator is induced by a polarization controller using the dependency of laser modes upon polarization. A modulation frequency is consecutively changed from 60 GHz to 80 GHz by controlling the wavelength of light reflected by the fiber grating mirrors.

Frequency tunable optical oscillator with fiber grating mirrors

A high-resolution field emission display that applies a field emission device (or a field emission array) being an electron source element to a flat panel display device. The field emission display includes an upper plate and a lower plate that face each other, wherein the lower plate and the upper plate are vacuum-packaged in parallel positions. A dot pixel of the lower plate includes a high-voltage amorphous silicon thin film transistor formed on the glass substrate of the lower plate, a diode type field emission film partially formed on the drain of the high-voltage amorphous silicon TFT, a passivation insulation layer formed on the high-voltage amorphous silicon TFT and the lateral side of the diode type field emission film, and an electron beam focusing electrode/light-shading film which vertically overlaps with the high-voltage amorphous silicon TFT on some parts of the passivation insulation layer and is formed on a lateral side of the diode type field emission film. A dot pixel of the upper plate includes a transparent electrode formed on the glass substrate of the upper plate, and a red, green or blue phosphor formed on some parts of the transparent electrode. Therefore, the high-resolution field emission display device can obtain an effect of focusing the electron beam trajectory and a light-shading effect for the TFT at the same time, and thus remarkably enhance the performance and the resolution of the field emission display.

High-resolution field emission display

A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature. Therefore, the present invention provides a method of fabricating a cathode for a triode-type field emission device using particulate emitter that is synthesized at a high temperature of 600&deg; C. over, as the emitter material.

Cathode structure for field emission device and method of fabricating the same

A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.

Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the same

A method for manufacturing a trench-gate type power semiconductor device is provided. A drift region having a low concentration of a first conductivity type and a body region of a second conductivity type are formed on a semiconductor substrate having a high concentration of the first conductivity type. A trench is formed using a nitride layer pattern and a sidewall oxide layer formed at sidewalls of the nitride layer pattern as a mask, and then the sidewall oxide layer is removed. The corners of the trench are rounded by performing a heat treatment in a hydrogen atmosphere. A source region having a high concentration of the first conductivity type is formed using the nitride layer pattern as a mask. The nitride layer pattern is removed, and an upper oxide layer pattern is formed to cover a predetermined portion of the source region and the gate conductive layer. A body contact region of the second conductivity type is formed using the upper oxide layer pattern as a mask. A source electrode is formed to be electrically connected to the body contact region, and a drain electrode is formed to be electrically connected to the semiconductor substrate.

Method for manufacturing trench-gate type power semiconductor device

An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.

Apparatus for forming strontium-tantalum-oxide thin film

The object of the present invention is to provide a RF induction plasma source generating apparatus which generates a stabilized plasma and sustains the stabilized plasma by maintaining the plasma pressure from several hundreds Torr to several thousands Torr with attachment a buffer nozzle cap, upper metallic blocking films and lower metallic blocking films to a nozzle cap, plasma tube and RF induction coils, respectively for separating the plasma source generating apparatus from the chamber. To accomplish the object of the invention, the plasma source generating apparatus comprising PBN tube, RF induction coils, a nozzle, and a nozzle cap is characterized by a buffer nozzle cap for locating between the nozzle cap and the plasma tube and modulating the flow of the gas to modulate the difference between the chamber pressure and the plasma pressure; sealing films formed by sealing the lips of the buffer nozzle cap, the nozzle cap and the plasma tube for preventing the leakage of gas; and upper blocking films and lower blocking films for blocking the spread out of the RF electric field induced in the RF induction coils and converging the plasma source.

RF induction plasma source generating apparatus

The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

Field emission device with low driving voltage

A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-type dopants into the substrate to form an activation layer, removing the first sensitive film, forming a second sensitive film 203a on the silicon thin film by photolithography to define an ohmic contact area and then forming a highly doped impurity layer on the side of the activation layer by way of an ion-implantation process, depositing a passivation film 206 over the entire surface of the substrate 201 after the removal of the sensitive film, and effecting an annealing or heat treatment, forming a third sensitive film of a predetermined pattern by using an ohmic contact forming mask, effecting a recess etching process to the surface of the substrate and forming an ohmic contact on the etched portion, and patterning a gate region by using the gate forming mask, recess-etching the surface of the substrate and depositing a low resistivity metal to form a gate.

Method of manufacturing GaAs metal semiconductor field effect transistor

Growing community of inventors

Taejon, South Korea

Kyoung-Ik Cho