Electronics and Telecommunications Research Institute

University-industry Cooperation Group of Kyung Hee University

Kyoung Ik Cho

Hye Yong Chu

Jae Bon Koo

Jin Ho Lee

Seung Youl Kang

Sang Seok Lee

Chi Sun Hwang

Chun Won Byun

Chan Woo Park

Sang Chul Lim

Chi-Sun Hwang

Yoon Ho Song

In-Kyu You

Seongdeok Ahn

Bock Soon Na

Soon-Won Jung

Min Ki Ryu

Chunwon Byun

Eun Soo Nam

Byoung Gon Yu

Sung Min Yoon

Kyung Soo Suh

Seung Yun Lee

Mun Cheol Paek

Jin Yeong Kang

Doo Hee Cho

Shin Hyuk Yang

Dong Young Kim

Jong-Heon Yang

Dong Suk Jun

Hong Yeol Lee

Ho Young Kim

Seong Deok Ahn

Soon Won Jung

Sung Yool Choi

Kyu Hwan Shim

Hyung Joun Yoo

Yeung Joon Sohn

Gee Pyeong Han

Jong-Hyun Ahn

Hasan Musarrat

Jae Dong Byun

Do Hyung Kim

Jong Dae Kim

Yil Suk Yang

Sung Weon Kang

Gi Heon Kim

Yoon-Ho Song

Yong Hae Kim

Hyung Sup Yoon

Young Ho Kim

Won Jae Lee

Hojun Ryu

Dong Min Kang

Kwi Dong Kim

Yong Suk Yang

Seong Hyun Kim

Ji-Young Oh

Sang Heung Lee

Ja Yol Lee

Seong-Mok Cho

Yark Yeon Kim

Jae-Eun Pi

Sung Woo Choi

Chul Am Kim

Jong Tae Lim

Hyunkoo Lee

Chong Ki Kwon

In Kyu You

Dong Yun Jung

Moo Jung Chu

Bo Woo Kim

Byoung-Hwa Kwon

Seok-Hwan Moon

Tae Youb Kim

Myoung Sook Oh

Su Jae Lee

Seon Eui Hong

Hea Cheon Kim

Sang-Hee Park

Jiyoung Oh

Sung-Min Yoon

Myung Sook Oh

Mun Cheol Baek

SangChul Lim

Hae Gwon Lee

ByeongHoon Kim

Shinhyuk Yang

Ju Youn Cha

Kyoung Soo Suh

Young Rae Cho

Ick Kyu Choi

Yong Jei Lee

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Electronic device and method for fabricating the same

Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

Pressure sensing element

Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Gate driving circuit and organic light emitting display device including the same

Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.

Display device and method of fabricating the same

A display panel includes pixels connected to each of gate lines and data lines. Each of the pixels includes a first transistor connected between a corresponding data line among the data lines and a first node and configured to deliver a data signal of the corresponding data line to the first node in response to an input signal received through a corresponding gate line among the gate lines, a reflective element circuit connected to the first node, and configured to implement the reflective mode in response to a signal of the first node when a first mode selection signal indicates a reflective mode, an emissive element circuit connected to a second node, and configured to implement the emissive mode in response to the signal of the first node when the mode selection mode indicates an emissive mode.

Display panel and display device including the same

Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.

Method for fabricating flexible display using a shape memory alloy film

Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.

Method of fabricating electronic circuit

Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

Thin film transistor and method for manufacturing the same

A micro ballpoint pen enabling to print directly straight, oblique, curved, dashed, broken and wavy lines and a printing apparatus including the same. The micro ballpoint pen may include a tip body including a caulking portion, at least one inner protrusion, and at least one expansible or shrinkable elastic portion, a ball provided between the caulking portion and the inner protrusion, the ball contacting and rolling on a target printing object to eject ink onto the target printing object, a supporting bar pressing the ball toward the caulking portion to form an ink outflowing channel between the caulking portion and the ball, and a control part expanding or shrinking the elastic portion to control the ink outflowing channel.

Micro ballpoint pen and printing apparatus

Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

Transferred thin film transistor and method for manufacturing the same

Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers.

Solid type heat dissipation device

A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

Method of manufacturing transparent transistor with multi-layered structures

Growing community of inventors

Daejeon, South Korea

Kyoung Ik Cho