Samsung Electronics Co., Ltd.

Kyoung-Iae Cho

Yoon-Dong Park

Jae-woong Hyun

Suk-Pil Kim

Seung-Hwan Song

Won-Joo Kim

Kyu-Charn Park

Sung-Jae Byun

Choong-Ho Lee

Jung-Hoon Lee

Young-Gu Jin

June-mo Koo

Example embodiments relate to a semiconductor device including a fin-type channel region and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a semiconductor pillar and a contact plug. The semiconductor substrate includes at least one pair of fins used (or functioning) as an active region. The semiconductor pillar may be interposed between portions of the fins to connect the fins. The contact plug may be disposed (or formed) on the semiconductor pillar and electrically connected to top surfaces of the fins.

Semiconductor device

A highly integrated non-volatile memory device and a method of operating the non-volatile memory device are provided. The non-volatile memory device includes a semiconductor layer. A plurality of upper control gate electrodes are arranged above the semiconductor layer. A plurality of lower control gate electrodes are arranged below the semiconductor layer, and the plurality of upper control gate electrodes and the plurality of lower control gate electrodes are disposed alternately. A plurality of upper charge storage layers are interposed between the semiconductor layer and the upper control gate electrodes. A plurality of lower charge storage layers are interposed between the semiconductor layer and the lower control gate electrodes.

Non-volatile memory device and method of operating the same

In a memory cell programming method, first through n-th programming operations are performed to program first through n-th bits of the n bits of data using the plurality of threshold voltage distributions. The first through n-th programming operations are performed sequentially. A threshold voltage difference between threshold voltage distributions used in the n-th programming operation is less than or equal to at least one threshold voltage difference between threshold voltage distributions used in the first through (n&#x2212;1)-th programming operations.

Memory cell programming methods capable of reducing coupling effects

Growing community of inventors

Yongin-si, South Korea

Kyoung-Iae Cho