Samsung Electronics Co., Ltd.

Kyoung-Hwan Kim

Tea-Kwang Yu

Weon-Ho Park

Kwang-Tae Kim

A bonding pad structure of a semiconductor device and a method of manufacturing the same reduce the likelihood of peel-off defects from occurring. The bonding pad structure includes a substrate, an interlayer insulation layer on the substrate, an upper wiring layer on the interlayer insulation layer, and a plurality of lower wiring layers disposed in the interlayer insulation layer between the upper wiring layer and the substrate and configured to prevent the interlayer insulation layer from cracking especially during a wire bonding process in which a wire is bonded to the upper wiring layer. For example, the respective areas occupied by the lower wiring layers sequentially increase in the interlayer insulation layer in a downward direction from the upper wiring layer towards the substrate. Also, each of the lower wiring layers may project further inwardly toward a central part of the bonding pad than the lower layer of wiring disposed above it in the interlayer insulation layer.

Bonding pad structure and manufacturing method thereof

Disclosed are a mask ROM device and a method of forming the same. This device includes a plurality of cells. At least one among the plurality of cells is programmed. The programmed cell includes a cell gate pattern, cell source/drain regions, a cell insulating spacer, a cell metal silicide, and a cell metal pattern. The cell metal pattern is extended along a surface of a cell capping pattern being the uppermost layer of the cell insulating spacer and the cell gate pattern to be electrically connected to cell metal silicide at opposing sides of the cell gate pattern.

Mask ROM devices of semiconductor devices and method of forming the same

A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material layer pattern to re-flow the re-flowable material layer pattern, removing the second insulating layer and the first insulating layer to expose the substrate, and forming a tunneling insulating layer.

Method of forming a tunneling insulating layer in nonvolatile memory device

In a nonvolatile semiconductor memory device, and a method of fabricating the same, the nonvolatile semiconductor memory device includes a cell doping region and source/drain regions in a semiconductor substrate, the cell doping region being doped as a first conductive type, a channel region disposed between the source/drain regions in the semiconductor substrate, a tunnel doping region of the first conductive type formed in a predetermined region of an upper portion of the cell doping region, the tunnel doping region being doped in a higher concentration than that of the cell doping region, a tunnel insulating layer formed on a surface of the semiconductor substrate on the tunnel doping region, a gate insulating layer surrounding the tunnel insulating layer and covering the channel region and the cell doping region exposed beyond the tunnel doping region, and a gate electrode covering the tunnel insulating layer and on the gate insulating layer.

Nonvolatile semiconductor memory device

A digital deflection processing apparatus and method for a cathode ray tube are suitable for digitally and programmably correcting distortion in the cathode ray tube. The apparatus includes a synchronous signal and clock signal generating portion for generating a first composite synchronous signal extracted from a composite video broadcast signal or a third composite synchronous signal selected from not less than one second composite synchronous signals. A synchronous signal phase compensating portion lags or leads the phase of the third composite synchronous signal, and outputs the lagged or led third composite synchronous signal as a deflection composite synchronous signal. A coordinate value generating portion operates predetermined values with a result counted by the deflection composite synchronous signal, and outputs the operation result as X and Y axis coordinate values. A horizontal drive signal generating portion determines rising and falling edges of a horizontal drive signal using a phase difference between a fly back pulse and the horizontal drive signal, a deflection horizontal synchronous signal, a horizontal correcting signal, and a predetermined duty value. An interpolation value calculating portion calculates the interpolation values of X and Y axes coordinate values using distortion correcting functions calculated by a time division method in response to selection signals, and outputs the calculated interpolation values as a horizontal correct signal, a dynamic focus signal, a vertical sawtooth drive signal, or an east-west distortion compensation signal. An output adjusting portion adjusts the gains of the vertical sawtooth drive signal and the east-west distortion compensation signal using predetermined values and the electric high tension of a cathode ray tube. A controlling portion outputs a synchronous control signal and predetermined values.

Apparatus and method for digital deflection processing

A drum servo system controls rotation of a head drum stably, even though a DFG signal has been dropped out. The drum servo system includes a DFG signal dropout detector for detecting the dropout of the DFG signal to generate first and second switching signals according to the detection. A digital-to-analog converter generates a drum motor driving voltage in dependence upon the first switching signal when the DFG signal is in a normal state and upon the second switching signal when the DFG signal is in an abnormal state. When the DFG signal is in the abnormal state, a previous state of the DFG signal is used for generating the drum motor driving voltage so that the head drum may rotate stably regardless of the dropout of the DFG signal.

Growing community of inventors

Hwaseong-si, South Korea

Kyoung-Hwan Kim