Samsung Electronics Co., Ltd.

Kyoung Ho Ha

Dong Jae Shin

Ho-Chul Ji

Seong Gu Kim

Kyoung Won Na

Yong Hwack Shin

Jung Hyung Pyo

Kwang Hyun Lee

In Sung Joe

Sung Dong Suh

Pil-Kyu Kang

Chang Gyun Shin

Dong Sik Shim

Jung Ho Cha

Chang Bae Lee

Yoon Dong Park

Yoon Sun Park

Chang Bum Lee

Sang Hun Choi

An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Optical beam steering devices and sensor systems including the same

A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.

Data processing systems, systems on chip, and data processing systems comprising systems on chip

A wafer test system includes an input device configured to transmit a test signal, a wafer including an optical port, an input port configured to receive the test signal, and an output port configured to output a result signal based on the test signal, a measuring device configured to measure the result signal, and an alignment device configured to align an optical fiber port of an optical probe with an alignment port based on the result signal and then align the optical fiber port with the optical port. The alignment port is the input port or the output port. The optical probe is configured to be the input device when the input port is the alignment port and the optical probe is configured to be the measuring device when the output port is the alignment port.

Test system and method for wafer including optical component

An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

Optical links, manufacturing methods thereof, and memory systems having the same

A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Photodetector structures including cross-sectional waveguide boundaries

An optical modulator includes a light input/output unit receiving an incident optical signal which has not been modulated, splitting the incident optical signal into a first optical signal and a second optical signal, and transmitting the first and second optical signals to a first path and a second path, respectively, of an optical waveguide. A phase shifter is positioned in at least one of the first and second paths and modulates a phase of at least one of the first and second optical signals, which have been received through the first and second paths, respectively, in response to an electrical signal. A phase-modulated signal is output. A reflective grating coupler reflects signals respectively received through the first and second paths back along the first and second paths respectively.

Optical modulator with reduced size and optical transmitter including the same

A de-emphasis format signal generator can be configured to combine first and second electrical non-de-emphasis formatted signals provided to first and second optical modulators, coupled in parallel with one another, to provide a combined optical signal having a de-emphasis format. Accordingly, three aspects of a de-emphasis formatted signal, including a de-emphasis delay aspect, a de-emphasis attenuation aspect, and a de-emphasis combining aspect, can provided separately and in different domains (such as in the electrical domain and in the optical domain) which can be combined with one another to provide an output de-emphasis formatted optical signal.

Optical modulators for generating de-emphasis formatted optical signals and methods of operating the same

An optical modulator structure can include a core region that comprises an optical transmission path having a refractive index that is modulated via electric charge introduced into the core region. A plurality of first vertical slabs comes into contact with and is spaced along a first side of the core region to provide a first path for the electric charge to/from the core region. A plurality of second vertical slabs come into contact with and is spaced along a second side of the core region, that is opposite to the first side, to provide a second path for the electric charge to/from the core region. Other structures and methods are disclosed.

Silicon based optical modulators including vertical slabs and methods of forming

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Photodetector structure and method of manufacturing the same

Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Growing community of inventors

Seoul, South Korea

Kyoung Ho Ha