Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Kyoung-ho Ha

Seong-gu Kim

Dong-jae Shin

Han-youl Ryu

Sung-Dong Suh

In-sung Joe

Ho-Chul Ji

Soo-Haeng Cho

Jung-ho Cha

Jin-kwon Bok

Dong-hyun Kim

Joon-seop Kwak

Youn-joon Sung

Sung-nam Lee

Hyun-il Byun

Yong-hwack Shin

Yoon-Dong Park

Pil-Kyu Kang

Kyoung-won Na

Tan Sakong

Ho-sun Paek

Ki-jae Song

Joong-kon Son

Kwan-Sik Cho

Heon-su Jeon

Kyu-sang Kim

Yong-jo Park

Yeoung-kum Kim

Si-hyun Park

Jae-Ho Lee

Ki-Nam Kim

Jun-youn Kim

Yong-hwa Park

Byoung-lyong Choi

Young Jae Choi

Dong-sik Shim

Won-Seok Lee

Kwang-Hyun Lee

Chang-bum Lee

Bok-ki Min

Hyung-kun Kim

Yong-Kweun Mun

Jun-o Kim

Dae-lok Bae

Gi-Tae Jeong

Ok-hyun Nam

Yong-woo Hyung

Jong-In Shim

Tae-hoon Jang

Beom-suk Lee

Keun-yeong Cho

Chang-gyun Shin

Jung-hye Kim

Jung-Hyung Pyo

Kwang-hyun Lee

Ju-hwan Yi

Yong-sang Park

Yong-Hwack Shin

Min-kyung Kim

Yoon-joon Sung

Jung-hye Chae

Sung-Nam Lee

The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.

Optical integrated circuit device array having bi-directional characteristics and optical system using the same

A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

Semiconductor laser device and method of manufacturing the same

Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.

Hybrid silicon lasers on bulk silicon substrates

An optical phased array (OPA) may be included in a light detection and ranging (LiDAR) system and may be configured to perform beam steering. The OPA may include a cascading structure of splitters configured to enable a branch operation to be performed M times. Each splitter may split an input optical signal in a ratio of 1:1 and output the split input optical signal. The OPA may include a plurality of sets of first phase shifters (PSs), each set of first PSs located exclusively on one output end of a separate splitter, each set of first PSs including a particular quantity of first PSs based on a branch position at which the separate splitter is located. The OPA may be included in a LiDAR system that is further included in a vehicle that is configured to enable navigation of the vehicle, including autonomous navigation, through an environment.

Optical phased array (OPA)

An optical transmitter includes photonic integrated circuits configured to respectively output optical transmission signals in different wavelength ranges. A photonic integrated circuit may include emitters configured to emit beams having different wavelengths; drivers configured to respectively provide power to the emitters, and a wavelength division multiplexer configured to transmit the beams emitted by the emitters. A photonic integrated circuit may include a switch device that controls the drivers, and light detectors configured to detect intensities of the beams emitted from the emitters. The switch device may selectively operate at least one driver of the plurality of drivers based on information associated with intensities of the beams. The switch device may selectively operate a driver connected to an emitter, based on a determination that an intensity of a beam emitted by another emitter is less than a threshold intensity value.

Optical transmitters including photonic integrated circuit

An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.

Optical device and method of manufacturing the same

An optical memory module comprises one or more memory devices configured to store data, and one or more optical interface modules configured to perform optical communication between the memory devices and an external device. Each of the optical interface modules comprises an input-output light distribution unit configured to divide received light to produce transmission light and reception light, an electrical-to-optical conversion unit configured to perform optical modulation based on the transmission light and an electrical transmission signal to generate an optical transmission signal, and a coherent optical-to-electrical conversion unit configured to perform a coherent reception based on the reception light and an optical reception signal to generate an electrical reception signal.

Optical interface module for coherent reception, optical memory module, and optical memory system comprising same

An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a &#x3c;100&#x3e; crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a &#x3c;110&#x3e; crystal orientation of the substrate and including the single crystalline semiconductor material.

Optical integrated circuits, semiconductor devices including the same, and methods of manufacturing the same

Semiconductor apparatuses having optical connections between a memory controller and a memory module are provided. A semiconductor apparatus includes a memory controller, at least one socket configured to receive a memory module, and a first optical-electrical module. A second optical-electrical module is mounted in the socket and optically coupled to the first optical-electrical module via at least one optical channel.

Semiconductor apparatuses having optical connections between memory controller and memory module

An optical memory system according to example embodiments includes a plurality of memory modules, each memory module including a plurality of memory devices; a light source; a light distribution unit connected to the light source through a first optical transmission line; a plurality of second optical transmission lines connected between the light distribution unit and the plurality of memory modules; a plurality of electrical to optical converters, each connected to at least one of the second optical transmission lines; and a plurality of output optical transmission lines connected to the plurality of electrical to optical converters, each output optical transmission line for outputting an electrical to optical converted signal.

Optical memory system including an optically connected memory module and computing system including the same

A semiconductor package and a semiconductor device including the same. The semiconductor package includes: a package substrate; a plurality of connection elements that are disposed on the package substrate; and a semiconductor chip that includes at least one optical input/output element that transmits/receives an optical signal to/from the outside at an optical input/output angle with respect to a direction perpendicular to a bottom surface of the package substrate, and is electrically connected to the package substrate through the plurality of connection.

Semiconductor package and semiconductor device including the same

An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Optical modulator formed on bulk-silicon substrate

Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Optical waveguide and coupler apparatus and method of manufacturing the same

A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Memory system, memory test system and method of testing memory system and memory test system

A phase shifter includes an optical waveguide, a plurality of impurity regions and a plurality of electrodes. The optical waveguide receives an optical input signal and outputs an optical output signal. The impurity regions include respective charge carriers. The impurity regions are disposed in contact with the optical waveguide at respective contact surface, where at least one of the contact surfaces has a zigzag pattern. The electrodes are connected to the respective impurity regions. Application of an electrical signal to at least one of the electrodes phase-shifts the optical output signal with respect to the optical input signal. Therefore, the phase shifter may efficiently vary a magnitude of the phase shift of the optical output signal.

Phase shifter and electro-optic modulation device including the same

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Seoul, South Korea

Kyoung-ho Ha