Samsung Electronics Co., Ltd.

Kyoung-Ha Eom

Sung-Un Kwon

Ik-Soo Kim

Byoung-Jae Bae

Dong-Hyun Im

Sang-sup Jeong

Gyu-Hwan Oh

Doo-Hwan Park

Chul-Ho Shin

Sung-Lae Cho

Jae-Seung Hwang

Yong-Hwan Ryu

Jong-Sub Lee

Ha-Neul Lee

Sang-Gyo Chung

A method of forming fine patterns of semiconductor devices is disclosed. The method comprises forming a hard mask layer on an etch target, which includes first and second regions. The hard mask layer may further have first and second preliminary mask patterns formed on the same. Furthermore, a spacer layer may be formed on the first and second preliminary mask patterns. The spacer layer and the first and second preliminary mask patterns may be partially removed to form first and second spacers on sidewalls of the first and second preliminary mask patterns, respectively. The second spacer in the second region may have a top surface higher than a top surface of the first spacer in the first region. The height differences between the spacers allow forming of first and second patterns in the first and second regions, and thereby forming fine patterns of semiconductor devices.

Methods of forming patterns of a semiconductor devices

A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Method of forming semiconductor device having self-aligned plug

Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH) gas. The etching object layer includes a magnetic material or a phase change material.

Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same

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Incheon, South Korea

Kyoung-Ha Eom