Samsung Electronics Co., Ltd.

Kyoung-Eun Uhm

Byung-Sun Kim

Tae-Jung Lee

Jin-Ha Jeong

Oh-Kyum Kwon

Dong-Il Park

Youngmok Kim

Kyunglyong Kang

Tae-Cheol Lee

Yong-Sang Jeong

Hodae Oh

Ae-Gyeong Kim

A method for manufacturing a semiconductor device includes forming a device isolation layer in a substrate to define an active region, forming a gate insulating layer covering at least a portion of the active region, forming a gate electrode on the gate insulating layer, and forming an interlayer insulating layer on the gate electrode. The gate insulating layer includes a first portion overlapping with the active region and a second portion overlapping with the device isolation layer. The forming of the gate insulating layer includes etching at least a part of the second portion of the gate insulating layer to thin the part of the second portion of the gate insulating layer.

Method for manufacturing semiconductor device

A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Semiconductor device

A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.

Nonvolatile memory device and method of forming the same

Growing community of inventors

Incheon, South Korea

Kyoung-Eun Uhm