Skhynix Inc.

Hynix Semiconductor Inc.

Kyoung-Eun Chang

Kwon Hong

Sung-Jin Whang

Moon-Sig Joo

Bo-Min Seo

Won-Kyu Kim

Jung-Yeon Lim

Seung-Woo Shin

Yong-Seok Eun

A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

Method for fabricating semiconductor device

Growing community of inventors

Gyeonggi-do, South Korea

Kyoung-Eun Chang