Canon Kabushiki Kaisha

Kyouhei Watanabe

Tetsuya Itano

Kazuo Yamazaki

Nobuyuki Endo

Takeshi Ichikawa

Junji Iwata

Masaki Kurihara

Yasuhiro Sekine

Masataka Ito

Nobuhiko Sato

Hitoshi Shindo

Shingo Kitamura

Daisuke Shimoyama

Mariko Furuta

Jun Iwata

An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Photoelectric conversion apparatus and system

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Member for solid-state image pickup device and method for manufacturing solid-state image pickup device

In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Solid-state imaging device having projection regions from light shielding and photoelectric conversion

Solid-state image pickup apparatus and image pickup system

Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.

Solid-state image pickup device having buffers connected to gates of transistors with first gate insulating film thicker than second gate insulating film

An image processing apparatus includes a skin area detection unit configured to detect a skin area of an object person, a difference area detection unit configured to detect a difference area between the visible light image and the infrared light image, a correction target area detection unit configured to detect a correction target area of the object person based on the skin area detected by the skin area detection unit and the difference area detected by the difference area detection unit, and a correction unit configured to correct the correction target area in the visible light image.

Image processing apparatus, method therefor, and storage medium

Solid-state imaging device having light shielding member to reduce transmitted light

Solid-state image pickup device with signal processing and level shifting

Growing community of inventors

Yokohama, Japan

Kyouhei Watanabe