Tohoku University

Kyota Watanabe

Tetsuo Endoh

Hideo Ohno

Shunsuke Fukami

Hideo Sato

Kenchi Ito

Shoji Ikeda

Hiroaki Honjo

Fumihiro Matsukura

Masaaki Niwa

Mathias Bersweiler

Chaoliang Zhang

Ayato Ohkawara

The magnetic memory element () includes: a conductive layer that includes a heavy metal layer () containing a 5d transition metal; a first ferromagnetic layer () that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization; a barrier layer () that is adjacent to the first ferromagnetic layer () and includes an insulating material; a reference layer () that is adjacent to the barrier layer () and has at least one second ferromagnetic layer () having a fixed magnetization direction; a cap layer () that is adjacent to the reference layer () and includes a conductive material; a first terminal (T) that is capable of introducing a current into one end of the heavy metal layer () in the longitudinal direction; a second terminal (T) that is capable of introducing a current into the other end of the heavy metal layer () in the longitudinal direction; and a third terminal (T) that is capable of introducing a current into the cap layer ().

Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same

A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B)/first non-magnetic layer ()/first magnetic layer ()/first non-magnetic insertion layer ()/second magnetic layer (). A magnetostatic coupling is established between the first magnetic layer () and the second magnetic layer () due to magnetostatic interaction becoming dominant.

Magnetoresistive element and magnetic memory

A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.

Magnetoresistance effect element and magnetic memory

A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (K) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.

Growing community of inventors

Sendai, Japan

Kyota Watanabe