Toyoda Gosei Co., Ltd.

Kyosuke Masuya

Takehiko Okabe

Takashi Hodota

A semiconductor light emitting element () including of a substrate () composed of sapphire; a laminated semiconductor layer () composed of an n-type semiconductor layer (), a light emitting layer () and a p-type semiconductor layer () provided on the substrate (); a first electrode () formed in the p-type semiconductor layer (); and a second electrode () formed in the n-type semiconductor layer (). Further, the first electrode () includes a first conductive layer () composed of an oxide transparent conductive material laminated on the p-type semiconductor layer (); a reflection layer () which contains silver laminated on the first conductive layer (); a second conductive layer () composed of an oxide conductive material laminated on the reflection layer (); and a coating layer () provided so as to cover the first conductive layer (), the reflection layer () and the second conductive layer ().

Semiconductor light emitting element and method for producing semiconductor light emitting element

Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type semiconductor layer, wherein one or both of the one and other electrodes has a structure such that an ohmic contact layer, a metal reflection layer, a first anti-diffusion layer and a first adhesion layer are laminated in this order, and the first adhesion layer has an outer peripheral portion which extends so as to be in contact with the laminated semiconductor layer, so as to completely cover the first anti-diffusion layer.

Growing community of inventors

Ichihara, Japan

Kyosuke Masuya