Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Kyosuke Kuramoto

Takayuki Yanagisawa

Masatsugu Kusunoki

Harumi Nishiguchi

Yosuke Suzuki

Misao Hironaka

Yoshihito Hirano

Hiroshi Kurokawa

Hitoshi Sakuma

Katsuomi Shiozawa

Tohru Takiguchi

Yasunori Tokuda

Akihito Ohno

Motoharu Miyashita

Yasuyuki Nakagawa

Kohei Sakai

Takehiro Nishida

Kyozo Kanamoto

Yosuke Akino

Hiromasu Matsuoka

Fumio Shohda

Fumio Shoda

Yuji Iwai

Takeo Shirahama

Hidenori Fukahori

A semiconductor laser device is configured so that, on at least one of the respective opposing surfaces of a semiconductor laser chip and a sub-mount and the respective opposing surfaces of the sub-mount and a heatsink, one or more treatment regions are provided where adhesion of a bonding material or bonding material used for their bonding is reduced, wherein the one or more treatment regions are placed to define, in a traveling direction of light, different coverages depending on a position in an array direction of multiple light emitting regions.

Semiconductor laser device

A semiconductor laser comprises a window structure part including a low resistance active layer formed in end face regions, to have a lower resistance than an active layer located inward with respect to the end face regions. A length between the front end of the contact layer and the front end face is longer by 10 &#x3bc;m or more than a length of a front-end-face side window structure part, and is shorter than a length between the front end face and the rear end of the contact layer. A length between an end of a rear side electrode on the side of the front end face and the front end face is 1.2 times or more a substrate thickness of a substrate, and is shorter than a length between the front end face and an end of the rear side electrode on the side of the rear end face.

Semiconductor laser

A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.

Method for manufacturing semiconductor device

A laser device () emits laser light. A lens cap () covers the laser device (). A lens () is built in the lens cap () and collects or collimates the laser light. A flat surface () perpendicular to an optical axis () of the laser light is provided in an upper surface of the lens ().

Method for manufacturing optical module

A semiconductor laser device includes: a semiconductor laser including a plurality of emission regions into which currents are injected to emit laser beams and first and second major surfaces opposite to each other; and a plurality of first wires bonded to the first major surface of the semiconductor laser, wherein the first major surface of the semiconductor laser has a first stripe region corresponding to one of the plurality of emission regions, and a second stripe region corresponding to another of the plurality of emission regions, and the number of the first wires bonded to the first stripe region is larger than the number of the first wires bonded to the second stripe region.

A laser includes a wavelength selecting elementthat selectively reflects laser beams with wavelengths &#x3bb;=&#x3bb;, &#x3bb;, &#x3bb;, . . . , &#x3bb;(n&#x2267;1) of different laser oscillation modes from among fundamental oscillation wavelengths of laser beams passing through a wavelength conversion element, and the wavelength conversion elementthat converts the laser beams with the wavelengths &#x3bb;=&#x3bb;, &#x3bb;, &#x3bb;, . . . , &#x3bb;(n&#x2267;1) of different laser oscillation modes reflected by the wavelength selecting elementto harmonics. When using a material with a wide gain band as a laser mediumof a solid-state laser element, a waveguide laser is implemented capable of carrying out high-efficiency wavelength conversion at a plurality of wavelengths within the gain band.

Waveguide laser

In at least one opening of a plurality of openingsand, the following inequality is satisfied:&#x2266;&#xbd;&#xb7;&#xb7;()where x represents a minimum distance in a horizontal direction between an end of the one opening and an end of a submount, and t represents a thickness of the submount, and

A laser mediumis shaped like a plate and has a waveguide structure in a direction of the thickness of a surface thereof perpendicular to the optical axis thereof. A nonlinear materialis placed on the optical axis of the laser mediumclose to the laser mediumand has a waveguide structure in the same direction as that of the waveguide structure of the laser medium. A &#xbc; wavelength plateis placed close to one of surfaces, which are perpendicular to the optical axis, of the nonlinear material, the one being opposite to a surface close to the laser medium

Planar waveguide laser device

An end surfaceof a solid-state laser elementis sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surfaceof a wavelength conversion elementis sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surfaceand the end surfaceare arranged in such a way as to be opposite to each other.

Laser device

A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Semiconductor device

A semiconductor light-emitting diode includes an electrically conductive substrate transmissive to light-emitting wavelengths, and semiconductor layers including a light-emitting layer, on the substrate. A principal-surface electrode is located on the semiconductor layers and a rear-surface electrode having an opening is located on the rear surface of the substrate. The width of the opening is L, the distance between the rear-surface electrode and the light-emitting layer is t, L&#x2266;2 t, and the rear-surface electrode covers no more than 40% of the rear surface of the substrate.

Semiconductor light-emitting diode

A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.

A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.

Nitride semiconductor light-emitting device

A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1&#xd7;10cmor more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120&#xd7;L &#x3bc;mor less.

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.

Growing community of inventors

Tokyo, Japan

Kyosuke Kuramoto