Semiconductor Energy Laboratory Co., Ltd.

Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Sow Corporation

Kyosuke Ito

Toru Itakura

Jun Ishikawa

Rie Yokoi

Yusuke Otake

Eiji Sugiyama

Hidekazu Takahashi

Yoshitaka Dozen

Daiki Yamada

Shunpei Yamazaki

Junya Maruyama

Osamu Nakamura

Fumihiko Koga

Takuya Tsurume

Hideaki Togashi

Taiichiro Watanabe

Keisuke Hatano

Toyotaka Kataoka

Shinichiro Yagi

Yusaku Sugimori

Junpei Momo

Toshifumi Wakano

Nobuhiro Inoue

Yukie Suzuki

Kiyofumi Ogino

An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrodethat are stacked, in which the photoelectric conversion unit further includes a charge storage electrodearranged apart from the first electrodeand arranged to face the photoelectric conversion layerthrough an insulating layer, and when photoelectric conversion occurs in the photoelectric conversion layerafter light enters the photoelectric conversion layer, an absolute value of a potential applied to a partof the photoelectric conversion layerfacing the charge storage electrodeis a value larger than an absolute value of a potential applied to a regionof the photoelectric conversion layerpositioned between the imaging element and an adjacent imaging element.

Imaging element, stacked imaging element, and solid-state imaging apparatus

A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Light-receiving device, imaging device, and distance measurement device

A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Sensor chip and electronic device

An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a photoelectric conversion film disposed above the substrate. A first pixel includes a first photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. A second pixel includes a second photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion is shared by the first photoelectric conversion regions of the first and second pixels. A portion of the first photoelectric conversion regions of the respective pixels is between a light incident surface of the substrate and the vertical transistor for the respective pixel.

Solid-state imaging element and electronic device

Light-receiving device, imaging device, and distance measurement device for expanded range of photon detection efficiency

An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Solid-state imaging element having a photoelectric conversion layer and a pair of electrodes

An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.

Avalanche photodiode sensor

A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte.

Ionic liquid, nonaqueous electrolyte, and power storage device

Solid-state imaging element and solid-state imaging apparatus having a photoelectric conversion layer and a pair of electrodes

An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a first pixel including a first region of a first photoelectric conversion element, a first region of a second photoelectric conversion element, wherein the first and second photoelectric conversion elements are formed in the substrate, and a first vertical transistor connected to the first region of the first photoelectric conversion element. A second pixel includes a second region of the first photoelectric conversion element, a second region of the second photoelectric conversion element, and a second vertical transistor connected to the second region of the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion stores charges from the first and second regions of the first photoelectric conversion element in the first and second pixels. The imaging device includes a photoelectric conversion film disposed above the substrate.

The present technology relates to a solid-state imaging element, a solid-state imaging element manufacturing method, and an electronic apparatus that make it possible to suppress both junction leakage and diffusion leakage of an FD in an FD storage sensor. The present technology includes a photodiode, a photoelectric conversion film, a diffusion layer, and an impurity layer. The photodiode and the photoelectric conversion film perform photoelectric conversion of incident light. The diffusion layer has a second polarity, which is different from a first polarity possessed by the photodiode, and stores an electric charge derived from photoelectric conversion by the photoelectric conversion film. The impurity layer includes impurities having the first polarity. The photodiode and the diffusion layer are disposed on an identical substrate in parallel with each other. The impurity layer is disposed below the diffusion layer. The present technology is applicable to solid-state imaging elements.

Solid-state imaging element, solid-state imaging element manufacturing method, and electronic apparatus

Growing community of inventors

Kanagawa, Japan

Kyosuke Ito