Samsung Electronics Co., Ltd.

Adeka Corporation

Kyoo-Chul Cho

Youn-Joung Cho

Jung-sik Choi

Jung-Ho Lee

Jun-Hyun Cho

Atsushi Sakurai

Tae-Sung Kim

Tomoharu Yoshino

Haruyoshi Sato

Mi-Ae Kim

Atsuya Yoshinaka

Junji Ueyama

Senji Wada

Masako Shimizu

Jin-Seo Lee

Young-soo Park

Dong-jun Lee

Won-Joo Kim

Sam-jong Choi

Seung-Min Ryu

Gi-jung Kim

Gi-Jung Kim

Tae-Yeol Heo

Tae-yeol Heo

Sook-Hyun Park

Kyong-rim Kang

Soo-yeul Choi

The &#x3b2;-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the &#x3b2;-ketoimine ligand. A method of forming the &#x3b2;-ketoimine ligand and a method of forming a thin film using the metal complex compound including &#x3b2;-ketoimine ligand are provided.

&#x3b2;-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.

3D CMOS image sensors, sensor systems including the same

Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.

Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same

An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.

Organic aluminum precursor and method of forming a metal wire using the same

In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae:  

Organic aluminum precursor and method of manufacturing a metal wiring using the same

An apparatus for analyzing a substrate employing a copper decoration includes a bath having at least two receiving containers for receiving electrolytes, slots formed at insides of the receiving containers for receiving substrates to be analyzed in a direction that is normal to a bottom face of the bath, lower copper plates provided in the receiving containers, the lower copper plates making contact with entire rear faces of the substrates received in the receiving containers, upper copper plates provided in the receiving containers, each of the upper copper plates corresponding to a respective one of the lower copper plates, and separated from front faces of the substrates, and a power source connected to the upper copper plates and the lower copper plates for providing voltages to the same. A plurality of substrates may be simultaneously analyzed using one apparatus thereby greatly reducing an amount of time required for the analysis.

Apparatus for analyzing a substrate employing a copper decoration

Types of defects on a wafer are discriminated according to defect measurements obtained from a wafer inspection system which includes a plurality of dark field detectors. Using the wafer measurement system, it is determined whether first, second and third conditions are satisfied. The first condition is when a size of a defect on the wafer measured by the wafer inspection system is smaller than a limit value denoting a maximum size of crystal originated particles. The second condition is when a correlation between a plurality of defect light intensity values detected by a plurality of dark field detectors of the wafer measurement system satisfies a reference value. The third condition is when a location of the defect measured by the wafer inspection system is within a vacancy-rich area of the wafer. The type of the defect is then determined to be a crystal originated particle when the first, second and third conditions are all satisfied. On the other hand, the type of defect is determined to be an actual particle when any one or more of the first, second and third conditions is not satisfied.

Wafer surface inspection method

Growing community of inventors

Yongin-si, South Korea

Kyoo-Chul Cho