Samsung Electronics Co., Ltd.

Kyong-Won An

Yujin Kim

Bio Kim

Junggeun Jee

Sookyeom Yong

Jaehyun Yang

Youngjun Cheon

Han-Mei Choi

Dong-chul Yoo

Sanghoon Lee

Cha-young Yoo

Sunggil Kim

Myoung-Bum Lee

Se-hoon Oh

Young-Geun Park

Kwang-Hee Lee

Woo-Sung Lee

Woosung Lee

Yongseok Cho

Byong-ju Kim

Seon-ho Jo

Hyunyong Go

A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Three-dimensional semiconductor memory devices

In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.

Semiconductor device having sacrificial layer pattern with concave sidewalls and method fabricating the same

A nonvolatile memory device includes an insulating pattern extending in a first direction, a conductive pattern on the insulating pattern, and an electrode structure extending in the first direction. The electrode structure is adjacent the insulating pattern and conductive pattern, and includes an alternating pattern of gate electrodes and interlayer insulating films. A protection film adjacent a side surface of the electrode structure has a shorter length in the first direction than a length of the electrode structure.

Nonvolatile memory device and method for fabricating the same

Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.

Method of manufacturing semiconductor device

Methods of manufacturing a semiconductor device are provided including forming a charge storage layer on a gate insulating layer that is on a semiconductor substrate. A blocking insulating layer is formed on the charge storage layer and an electrode layer is formed on the blocking insulating layer. The blocking insulating layer may be formed by forming a lower metal oxide layer at a first temperature and forming an upper metal oxide layer on the lower metal oxide layer at a second temperature, lower than the first temperature.

Methods of manufacturing semiconductor devices including metal oxide layers

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Seoul, South Korea

Kyong-Won An