Korea Institute of Science and Technology

Kyong Sop Han

Hyung Jin Jung

Won Kook Choi

Seok Keun Koh

Sik Sang Gam

Han Kyu Seong

Heon Jin Choi

Yun-Ki Byeun

Sung Churl Choi

The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N), hydrogen chloride (HCl) and ammonia (NH), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.

Fabrication method of gallium manganese nitride single crystal nanowire

A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.

Process for modifying surfaces of materials, and materials having surfaces modified thereby

Process for modifying surfaces of materials, and materials having

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Kyong Sop Han