International Business Machines Corporation

Kyong-Min Kim

Shao-Fu S Chu

Shaw-Ning Mei

Pavel Smetana

Louis L Hsu

Chang-Ming Hsieh

Victor J Silvestri

Victor R Nastasi

Somnuk Ratanaphanyarat

Robert E Bendernagel

Thomas H Strudwick

William H White

Robert J Von Gutfeld

Mary Joseph Saccamango

Wolfgang Alfred Westdorp

Jean-Claude Fouere

Donald R Vigliotti

Mei Shaw-Ning

A bonded, SOI wafer which has stepped isolation trenches and sublayer interconnections first formed in a bulk silicon wafer. After these process steps are complete, a thin polysilicon layer is formed on the planarized upper surface of the bulk silicon wafer. This thin polysilicon layer is then bound to an oxide layer on the surface of a separate wafer to form a bonded silicon-on-oxide structure. The entire assembly is, in effect inverted, and what had been the lower surface of the bulk silicon wafer, is removed to the bottom of the deepest trench step. In this bonded SOI structure, regions between the trenches are deep and suitable for bipolar device fabrication, while the trench steps form shallow regions suitable for fabrication of CMOS devices.

Advanced silicon on oxide semiconductor device structure for BiCMOS

Method of forming silicon on oxide semiconductor device structure for

A vertical bipolar transistor is constructed with reduced step height by codeposition of a polysilicon base contact member and an epitaxial device layer, thereby placing the base contact below the device surface, and by the use of a doped glass layer as a dopant source for the base contact and as a dopant source to provide a continuous conductive path to the base, and as the dielectric separating the base contact from the emitter contact, and as an etch stop when forming the base implantation aperture.

Bipolar transistor with reduced topography

A multiprobe apparatus for probing a device having a plurality of contacts includes a holder for holding the device in a fixed position; a plurality of electrically conducting elongated probes, each probe being adapted for electrical communication with a respective one of the contacts by tangential linear contact along the length of the probe; and a probe support for supporting the probes and for maintaining the probes in electrical communication with the contacts.

Multiprobe apparatus

Method of making bipolar transistor with reduced topography

An inexpensive and reliable technique for forming connections to a substrate or buried layer of a semiconductor structure employs a laser to melt a small, selected region of a lightly doped layer and a highly doped underlying layer. Extremely rapid diffusion of impurities and mixing of materials within the liquid phase of the melt quickly creates a uniformly doped conductive region when the melt is allowed to recrystallize.

Method of making low resistance substrate or buried layer contact

A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Semiconductor device structure employing a multi-level epitaxial

Method of manufacturing a semiconductor device structure employing a

An improvement in the method and apparatus for growing a semiconductor crystal by the Czochralski technique comprising the steps of applying a rotating transverse magnetic field to molten semiconductor material held in a crucible during the seed crystal pulling and crystal formation step, to cause the molten material to rotate within the crucible, and simultaneously increasing the rotational velocity of the magnetic field during this crystal formation as a function of the length of the crystal pulled from said molten material to thereby vary the rotation rate of the molten material. These steps result in the uniform axial distribution of oxygen in the crystal.

Semiconductor crystal growth via variable melt rotation

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Hopewell Junction, NY, United States of America

Kyong-Min Kim