Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Kyong Min Kim

Han Sang Song

Chan Lim

Dong Jun Kim

Ki Seon Park

Jong Min Lee

You Sung Kim

Kwang Jun Cho

Chang Seo Park

Kil Ho Lee

Dong Woo Shin

Kyung Cheol Jeong

Ho-Jung Sun

Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while preventing generation of leakage current in the capacitor. The disclosed method comprises comprising the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; depositing an amorphous TaON film having an excellent dielectric constant on the ruthenium film; subjecting the resulting substrate to a first thermal treatment to prevent oxidation of the lower electrode and to remove carbons present in the amorphous TaON thin film; subjecting the resulting substrate to a second thermal treatment to crystallize the amorphous TaON thin film; and forming a metal film as a metal film on the crystalline TaON film.

Method for fabricating capacitor of semiconductor device

A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

Method for forming capacitor of semiconductor device

Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as 'Ru'), which provides improved formation rates of Ru film having desired thickness using ozone (O ) having high reactivity.

Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while generation of leakage current in the capacitor. The method comprises the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; forming a TaON film having a high dielectric constant on the ruthenium film; and forming a upper electrode on the TaON film.

Methods for forming capacitors of semiconductor devices, and more specifically, to a method for forming a capacitor having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as 'Ru') and dielectric layer formed of tantalum oxide (Ta O ) film, which provides improved formation of dense Ru film using a CVD method at high temperature, thereby improving electrical characteristics of the capacitor.

Method for forming a capacitor of a semiconductor device

The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of providing a semiconductor substrate where a plug polysilicon film and a metal barrier film consisting of Ti/TiN film have been sequentially filled in a contact hole of an interlayer insulation film, forming a cap oxide film on the semiconductor substrate, patterning the cap oxide film to define a capacitor region and to expose the interlayer insulation film and the metal barrier film, forming a nitride film over the whole substrate according to a plasma treatment using NH gas, depositing an Ru film for a lower electrode on the nitride film, forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and the nitride film, and removing the cap oxide film, depositing an amorphous TaON film on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta O film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH in order to reduce oxygen or a NH plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta O film and thus improve reliability of the device.

Method of manufacturing a capacitor in a semiconductor device

The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

A method of manufacturing a capacitor in a semiconductor device wherein a first a Ru film used as a lower electrode is deposited by an LPCVD method, a mixed plasma process of Ar and H is performed, and a second Ru film is deposited by an LPCVD method, thus improving the surface roughness of the Ru film. The method can obtain a high capacitance and a low leakage current in a capacitor using a Ta O film as a dielectric film.

There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta O film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta O film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta O film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta O film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta O film on the metal layer, wherein the process of depositing the Ta O film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta O film.

Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer

There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta,O,, BST((Ba,Sr,)TiO,) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O,gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O,, by means of plasma process using O,gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O,gas.

Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma

A method of manufacturing a capacitor in a semiconductor device uses a metal as an upper electrode and a lower electrode, and forms a dielectric film in a double structure of a titanium-containing tantalum oxide film and an amorphous tantalum oxide film. Therefore, the invention can secure a sufficient capacitance while improving an electrical characteristic of the capacitor.

The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta,O,to form a dielectric film in a Ta,O,capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO,film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta,O,dielectric film and then performing deposition and thermal process of Ta,O,to form a Ta,O,dielectric film. As a good WO,film is formed on the surface of the underlying tungsten electrode before forming a Ta,O,dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta,O,dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO,film could be prevented, thereby improving the characteristic of the leak current of the Ta,O,capacitor.

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Kyoungki-do, South Korea

Kyong Min Kim