Lg Innotek Co., Ltd.

Korea Food Research Institute

Kyong Jun Kim

Min Cheol Park

Sung Ho Park

Hye-Young Kim

Joo Hyang Park

Mee-Ra Rhyu

Yu-Mi Lee

The present disclosure relates to a pharmaceutical composition or a food composition which has excellent activity of stimulating enteroendocrine cells while being safe with few side effects. The composition contains one or more of anextract, aextract, aextract, aextract and aextract as an active ingredient. The composition of the present disclosure can be usefully used as a pharmaceutical composition or a food composition for preventing, improving or treating diabetes mellitus, improving or treating heart diseases, improving or treating arteriosclerosis, improving or treating digestive disorders and malabsorption, preventing or treating obesity or suppressing appetite, protecting nerves, treating or improving liver diseases, and so forth. In addition, the composition of the present disclosure can promote the secretion of GLP-1, CCK or 5-HT, affect the activation of hTGR5 and act as TRP, TRPA1, G protein and PLC&#x3b2;2 agonists.

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Disclosed is a light emitting device package and a lighting system. The light emitting device package includes a body, a first lead frame on the body, a plurality of light emitting diodes on the first lead frame, and a molding member on the light emitting diodes. The distance between the light emitting diodes includes a distance equal to or less than a length of a first side of a first light emitting diode of the light emitting diodes.

Light emitting device package and lighting system

Provided are a lighting device and a lighting system having the same. The lighting device includes a board having a recess, a lead frame disposed in the recess and including a first lead frame protrusion protruding upward, and a light emitting device disposed on the lead frame.

Lighting device and lighting system having the same

Provided are embodiments of a light emitting device and fabrication methods thereof. The light emitting device can include a buffer layer provided between a substrate and a semiconductor layer incorporating a high fusion point metal. In a fabrication method of the light emitting device, the buffer layer incorporating a high fusion point metal can be formed on a substrate, and a semiconductor layer can be formed on the buffer layer.

Semiconductor light emitting device including a metal nitride buffer layer and fabrication method thereof

Provided are a light emitting apparatus and a light unit having the same. The light emitting apparatus includes a light emitting device includes a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Light emitting apparatus and light unit having the same

Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.

Semiconductor light emitting device and method for manufacturing the same

A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Light emitting device

Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 &#x212b; to about 300 &#x212b;.

Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to a grown epitaxial layer is reduced, and a size of an active layer increases, so that a light-emission efficiency increases. Even when a size of a light-emitting device is small, a short-circuit occurring between electrodes can be prevented. Further, brightness and reliability of the light-emitting device are improved.

Light-emitting device and manufacturing method therof

A light emitting apparatus includes a light emitting diode including a body with a light emitting diode chip packaged therein and a plurality of lead electrodes contacted with one side of the body and a board including a plurality of electrode pads connected to lower surfaces of the lead electrodes of the light emitting diode. The lower surfaces of the lead electrodes of the light emitting diode correspond to top surfaces of electrode pads of the board with same shapes. The lower surfaces of the lead electrodes of the light emitting diode are disposed within a region of top surfaces of the electrode pads of the board, respectively.

Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising III and V group elements on the single crystalline buffer layer.

Semiconductor light emitting device having multiple single crystalline buffer layers

Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.

Growing community of inventors

Gwangju, South Korea

Kyong Jun Kim