Samsung Electronics Co., Ltd.

Kyong-Joo Lee

Eun-Jung Lee

Sung-Nam Chang

Jin-joo Kim

Dae-Woong Kang

Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap.

Semiconductor devices comprising a plurality of gate structures

Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps.

Growing community of inventors

Suwon-si, South Korea

Kyong-Joo Lee