Samsung Electronics Co., Ltd.

Dongwoo Fine-chem

Dongwoo Fine-chem Co., Ltd.

Kyong-ho Lee

Sang-tae Kim

Seong-min Kim

Yong-Sun Ko

Jung-Min Oh

Hyo-San Lee

In-Gi Kim

Ji-Hoon Jeong

Mi-Hyun Park

Na-Rim Kim

Baik-soon Choi

Seung-Hyun Ahn

Sue-ryeon Kim

Young-taek Hong

Shi-Jin Sung

Ahn-Ho Lee

Sung-bae Kim

Jin-Seok Yang

In-goo Kang

Hyung-pyo Hong

Yong-Jun Cho

Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)NF, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

Composition for removing silicone resins and method of thinning substrate by using the same

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Compositions for removing photoresist

The present disclosure relates to an etching solution composition for a tungsten layer including N-methylmorpholine N-oxide and water, which is effective in selectively etching only a tungsten-based metal without etching a titanium nitride-based metal or a titanium aluminum carbide layer.

Etching solution composition for tungsten layer, method for preparing electronic device using the same and electronic device

Methods of manufacturing semiconductor devices using a composition for removing photoresist and methods of removing photoresist from a semiconductor substrate

A thinner composition including an acetate-based compound in an amount in a range of about 30 weight percent to about 70 weight percent, a lactate-based compound in an amount in a range of about 1 weight percent to about 20 weight percent, a propionate-based compound in an amount in a range of about 30 weight percent to about 60 weight percent, and an ether-based additive in an amount in a range of about 10 ppm to about 500 ppm, based on a total amount of the composition.

Thinner compositions

Growing community of inventors

Osan-si, South Korea

Kyong-ho Lee