Skhynix Inc.

Kyong-Bong Rouh

Mi-Ri Lee

Shang-Koon Na

Yong-Seok Eun

Su-Ho Kim

Tae-Han Kim

Hun-Sung Lee

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same

A transistor including a recessed gate structure having improved doping characteristics and a method for forming such a transistor. The transistor includes a recess in a semiconductor substrate, where the recess is filled with a recessed gate structure including an impurity doped layer and a layer doped with a capture species. The capture species accumulates the impurity and diffuses the impurity to other layers of the recessed gate structure.

Transistor with recess gate and method for fabricating the same

A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.

Growing community of inventors

Gyeonggi-do, South Korea

Kyong-Bong Rouh