Fuji Electric Holdings Co., Ltd.

Nec Corporation

Fuji Electric Co., Ltd.

Kyoko Kato

Haruo Kawakami

Hisato Kato

Nobuyuki Sekine

Keisuke Yamashiro

Masami Kuroda

Takahiko Maeda

Hisato c/o Fuji Electric Device Technology Co Ltd Kato

Haruo c/o Fuji Electric Advanced Technology Co Ltd Kawakami

A data analysis devicecomprises: a frequency analysis unitthat performs frequency analysis, under a predetermined condition, on each piece of a plurality of training data pieces including a plurality of class training data pieces some of which have been assigned a label indicating the data class; a cluster analysis unitthat clusters the frequency analyzed training data pieces into a number of classes of frequency analyzed training data; a computation unitthat computes, on the basis of the clusters, the degree to which frequency analyzed training data pieces assigned the same label are not included in the same cluster; and a selection unitthat selects, as a clustering model for assigning a label to a training data piece, clustering results according to the cluster analysis unitwhen the smallest degree was computed, from among the plurality of computed degrees.

Data analysis device, data analysis method and data analysis program

A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

Process for producing thin film field-effect transistor

A duplicate file detection devicehas a storage unit, a calculation unit, and a detection unit. The storage unitstores calculation information that defines data used in the calculation of the hash values of files in association with the extensions of the files. The calculation unitacquires the calculation information associated with the extension of each file to be examined from the storage unitand uses the acquired calculation information to calculate the hash value of each file to be examined. The detection unitdetects duplicated files by comparing the hash values of the files to be examined that are calculated by the calculation unit

Duplicate file detection device, duplicate file detection method, and computer-readable storage medium

Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: InMZnSnO(wherein M is Ga or Al, 0&#x2266;x&#x2266;1, &#x2212;0.2&#x2266;y&#x2266;1.2, z&#x2267;0.4 and 0.5&#x2266;(x+y)/z&#x2266;3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

Oxide semiconductor, thin-film transistor and method for producing the same

A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Switching device

A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

Growing community of inventors

Zushi, Japan

Kyoko Kato