Sanyo Electric Co., Ltd.

Kyoko Hirai

Yushi Jinno

Kiyoshi Yoneda

Tsutomu Yamada

Yoshihiro Morimoto

Shiro Nakanishi

In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film () to 5&#xd7;10atoms/cmat most but also to prevent crystallization of the a-Si film () being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film () covered with an interlayer insulation film () in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350&#xb0; C. to 400&#xb0; C. for one to three hours, more preferably 400&#xb0; C. for two hours. The result is that hydrogen atoms in the p-Si film () efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.

Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen

An electric shielding wire made of Cr is provided near the edge of a substrate, in which the electric shielding wire is a lower electric layer for an TFT element. Because countermeasures against static electricity are taken at an early manufacturing stage of the substrate, the elements formed on the substrate are protected against damage due to static electricity generated in subsequent stages. The electricity shielding wire is ultimately used as a pedestal for a wire. With this arrangement, characteristics of various elements of a driver-integrated LCD are protected against deterioration due to static electricity generated in a manufacturing process.

Display apparatus having an electric shielding wire and method for manufacturing the same

In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film ( ) to 5&times;10 atoms/cm at most but also to prevent crystallization of the a-Si film ( ) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film ( ) covered with an interlayer insulation film ( ) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350&deg; C. to 400&deg; C. for one to three hours, more preferably 400&deg; C. for two hours. The result is that hydrogen atoms in the p-Si film ( ) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.

Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the same

A sealing material is formed to cover a drain driver comprising a horizontal shift register and a sampling portion and its edge lines are linear on the horizontal shift register. Operation characteristics of TFT elements just below the sealing material are changed and are different from those of TFT elements of the area not below the sealing material. However, operation characteristics do not differ between phases of the shift register, and adverse effects for display can be prevented.

Display device

In a thin film transistor (TFT), a gate electrode, a gate insulating film, a poly silicon film having a channel, a stopper insulating film on the channel, an interlayer insulating film, a source electrode and a drain electrode, a planarizating film, and a transparent electrode are formed on an insulating substrate in that order. In this TFT, either of the source electrode and the drain electrode or the transparent electrode is formed on the interlayer insulating film or the planarizating film spreading over the channel. This will restrain the occurrence of a back channel resulting from polarization in the planarizating film or the interlayer insulating film in the TFT caused by water or impurity ions, or variation of a threshold voltage of the TFT when a back channel occurs. As a result, TFTs and liquid crystal displays which have few defects and can perform display having uniform brightness all over can be provided.

Thin film transistor

Gate lines and drain lines are arranged to cross each other on an inner surface of a substrate and display pixels are formed at individual intersections of these lines. For actuation of these elements, a drain driver, a gate driver, and a precharge driver are formed on the periphery of the substrate. Aluminum lines extend to respective circuits along the edge of the substrate from connecting terminals formed on the edge of the substrate. A sealing material is applied along the periphery of the substrate and an injection hole for liquid crystal is formed on one edge of the substrate. The drain driver is disposed on the edge opposite to the edge on which the injection hole is formed at a location as far from the injection hole as possible. Thus, the drain driver is distanced from the liquid crystal injection hole to prevent the failure of the display apparatus due to the fluctuation of a threshold value.

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Hashima, Japan

Kyoko Hirai