Kawasaki Steel Corporation

Kawasaki Microelectronics, Inc.

Kyoji Tokunaga

Tadashi Nakano

Tomohiro Ohta

Tomoharu Katagiri

Nobuyoshi Sato

Tsuyoshi Hashimoto

An insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, an insulating film forming coating solution for forming the insulating film, and a method of manufacturing the insulating film are set forth. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR) &mdash;, methyltrialkoxysilane expressed by a general formula, SiCH (OR) &mdash;, and tetraalkoxysilane expressed by a general formula, Si(OR) is coated on a semiconductor substrate ( ) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film ( ) which is composed of a silane-derived compound expressed by a general formula, SiH (CH ) O , where, 0<x<1, 0<y<1, x&plus;y&lE;1 is formed.

Method of forming an insulating film having SI-C, SI-O and SI-H bonds to cover wiringlines of a semiconductor device

Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film

A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O.sub.3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 350.degree. C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 atm to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatening process after the formation of the silicon oxide film can be made simpler.

Method of forming interlayer-insulating film using ozone and organic

Growing community of inventors

Chiba, Japan

Kyoji Tokunaga