Matsushita Electric Works, Ltd.

The Dow Chemical Company

Kyoji Tanaka

Hiroyoshi Yoden

Noboru Hashimoto

Susumu Kajita

Masao Kubo

Yi-Hung Chiao

William Rafaniello

Jun Tatsuta

Theresa A Guiton

Shigenari Takami

Ikko Kuzuhara

Shinobu Kida

JunHong Zhao

Yoshiharu Sanagawa

A semiconductor-chip mounting substrate with a high degree of reliability of an electrical connection between a substrate and a semiconductor chip such as IC chips is provided. The substrate has at least one projection thereon, which is integrally molded with the substrate. A conductive layer is formed on the projection to obtain a first bump. The semiconductor chip has a terminal projecting as a second bump on its surface. The semiconductor chip is mounted on the substrate such that the first bump contacts the second bump. A required contact pressure between the first bump and the second bump is held by use of a pressure holding means.

Semiconductor-chip mounting substrate having at least one projection thereon and a pressure holding means

Aluminum nitride sintered body with high thermal conductivity and its

An aluminum nitride (AlN) sintered product with a high thermal conductivity of 120 W/m.multidot.k or above can be produced at a relatively low sintering temperature of 1650.degree. C. or below in accordance with the following process of the present invention. That is, an A1N powder having a specific surface in a region of about 3.5 to 8 m.sup.2 /g and an oxygen content between 0.5 to 1.8 wt % is mixed with optimum additive amounts of sintering aids (I) to (III) to obtain a mixture powder. The sintering aid (I) is at least one selected from the group consisting of rare earth oxides and rare earth compounds which are converted to corresponding rare earth oxides by the sintering. The sintering aid (II) is at least one selected from the group consisting of alkaline earth oxides and alkaline earth compounds which are converted to corresponding alkaline earth oxides by the sintering. The sintering aid (III) is at least one selected from the group consisting of LAB.sub.6, NbC, and WB. The optimum additive amount of LaB.sub.6 is in a range of 0.05 to 3 wt % of the A1N sintered product. The mixture powder is compacted, and then sintered at the sintering temperature in a non-oxidation atmosphere to obtain the A1N sintered product.

Process for producing an aluminum nitride sintered product

Growing community of inventors

Kobe, Japan

Kyoji Tanaka