Kabushiki Kaisha Toshiba

Fujitsu Corporation

Toshiba Memory Corporation

Toshiba Electronic Devices & Storage Corporation

Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Kyoichi Suguro

Takayuki Ito

Yasushi Akasaka

Atsushi Murakoshi

Kazuaki Nakajima

Kouji Matsuo

Haruo Okano

Yoshitaka Tsunashima

Takeshi Shibata

Kiyotaka Miyano

Katsuya Okumura

Tomonori Aoyama

Nobuo Hayasaka

Tadashi Iijima

Toshihiko Iinuma

Kazumi Nishinohara

Gaku Minamihaba

Tomohiro Saito

Iwao Kunishima

Kazuyoshi Sugihara

Hiromi Niiyama

Hiroaki Yoda

Shinichi Nakamura

Yuichi Ohsawa

Ichiro Mizushima

Katsuhiko Hieda

Junichi Ito

Atsushi Yagishita

Mie Matsuo

Hitoshi Tamura

Shigeki Takahashi

Hisataka Hayashi

Hideshi Miyajima

Haruko Akutsu

Takaharu Itani

Jun-ichi Wada

Hisako Aoyama

Yoshimasa Kawase

Mitsuaki Izuha

Masayuki Tanaka

Masatoshi Yoshikawa

Hisashi Kaneko

Junichi Wada

Kazuhide Abe

Yukiteru Matsui

Daisuke Saida

Hiroshi Itokawa

Masao Iwase

Koji Shirai

Tsunetoshi Arikado

Shuichi Komatsu

Takayuki Hiraoka

Kumi Okuwada

Mitsutoshi Nakamura

Kazuya Nishihori

Hisanori Misawa

Yoshikazu Tanabe

Yoshiaki Kitaura

Tatsuya Hatanaka

Mitsuo Koike

Ichiro Taguchi

Shintaro Suehiro

Tadayuki Asaishi

Minoru Amano

Atsuko Sakata

Kazuya Nagaseki

Masayuki Kitamura

Keitaro Imai

Koji Yamakawa

Shinji Himori

Katsuaki Natori

Yoko Iwakaji

Seiji Inumiya

Kazuhiro Eguchi

Masako Kodera

Soichi Nadahara

Satoshi Wakatsuki

Tsukasa Azuma

Akifumi Gawase

Daisuke Ikeno

Yasuyuki Sonoda

Motoyuki Sato

Tatsuhiko Higashiki

Masayoshi Iwayama

Kikuo Yamabe

Yasuhiko Sato

Moto Yabuki

Soichi Yamazaki

Hitoshi Ito

Jun Hirota

Takahiko Kawasaki

Mitsutoshi Koyama

Hajime Eda

Toshiro Nakanishi

Taro Sugizaki

Hisako Ono

Kanna Tomiie

Kazuya Ouchi

Katsumi Rikimaru

Tatsuya Shima

A semiconductor manufacturing apparatus includes a first supply part configured to supply a gas including one or more group III elements on a substrate accommodated in a reaction chamber, a second supply part configured to supply a gas including one or more group V elements on the substrate, and a waveguide configured to irradiate a microwave to the gas including the one or more group V elements.

Semiconductor manufacturing apparatus

A semiconductor device according to an embodiment includes a first electrode pad containing copper as a main component and having a thickness equal to or more than 5 &#x3bc;m and less than 50 &#x3bc;m; an electrode layer containing copper as a main component and having a thickness equal to or more than 5 &#x3bc;m and less than 50 &#x3bc;m; and a semiconductor layer provided between the first electrode pad and the electrode layer.

Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereof

In one embodiment, a semiconductor manufacturing apparatus includes a support module configured to support a wafer having first and second faces. The apparatus further includes a chamber configured to contain the support module. The apparatus further includes a microwave generator configured to generate a microwave. The apparatus further includes a waveguide configured to emit the microwave into the chamber to irradiate the first or second face of the wafer with the microwave, the waveguide being provided to the chamber such that an incidence direction of the microwave emitted from the waveguide onto the first or second face is non-vertical to the first or second face.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

A method of manufacturing a semiconductor device includes forming a first metal containing a first conductivity-type impurity above a substrate provided with a first conductivity-type impurity region containing the first conductivity-type impurity and a second conductivity-type impurity region containing a second conductivity-type impurity; and forming a metal silicide containing the first metal by selectively causing, by thermal treatment, a reaction between the first metal and silicon contained in the substrate in the first conductivity-type impurity region.

Method of manufacturing semiconductor device

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a wafer, and a supporter configured to support the wafer in the container. The apparatus further includes a plasma generator including a plasma tube, and configured to form a film on the wafer by generating plasma in the container with the plasma tube during a first period and during a second period after the first period. The apparatus further includes a controller configured to set a distance between the plasma tube and the wafer to be a first distance during the first period, and set the distance to be a second distance longer than the first distance during the second period.

According to one embodiment, a semiconductor device comprises a first electrode; a second electrode containing a metal element; and a variable resistance element formed between the first electrode and the second electrode. The variable resistance element comprises an insulating first film disposed on a side of the first electrode and containing oxygen; and a second film disposed on the side of the second electrode and containing an element having a diffusion coefficient larger than the diffusion coefficient of the metal element in the first film and an electronegativity higher than the electronegativity of the metal element.

Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus

According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.

Method of manufacturing multilayer film

According to one embodiment, a manufacturing method of a semiconductor device includes forming a crystal film on a semiconductor substrate by irradiating the semiconductor substrate with a first microwave, obtained by providing frequency modulation or phase modulation of a first carrier wave which is a sine wave with a first frequency, using a first signal wave which is a sine wave or a pulse wave with a third frequency lower than a first frequency, and irradiating the semiconductor substrate with a second microwave, obtained by providing frequency modulation or phase modulation of a second carrier wave, which is a sine wave with a second frequency higher than the first frequency, using a second signal wave which is a sine wave or a pulse wave with a fourth frequency lower than the second frequency.

According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.

Method for manufacturing nonvolatile memory device

According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.

Semiconductor device and fabrication method thereof

According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

Semiconductor device and method of manufacturing the same

According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.

In accordance with an embodiment, a non volatile semiconductor memory device includes a substrate, a first electrode, a functional film, and a second electrode. The first electrode is provided on the substrate. The functional film is located on the first electrode and serves as a storage medium. The second electrode is provided on the functional film or in the functional film, and has a convex curved upper surface.

Non volatile semiconductor memory device and manufacturing method thereof

According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

Method of manufacturing magnetic memory

Growing community of inventors

Yokohama, Japan

Kyoichi Suguro