Shin-Etsu Quartz Products Co., Ltd.

Other

Heraeus Quarzglas Gmbh & Co Kg

Heraeus Quarzglas Gmbh

Shin-Etsu Quartz Products Ltd.

Kyoichi Inaki

Akira Fujinoki

Nobumasa Yoshida

Tatsuhiro Sato

Shigeru Yamagata

Ralf Takke

Tohru Segawa

Heinz Fabian

Hiroyuki Nishimura

Stephan Thomas

Toshiyuki Kato

Atsushi Shimada

Itsuo Araki

Toshikatsu Matsuya

Tohru Yokota

Toshikatu Matsuya

Tomoyuki Shirai

Naoki Hayashi

Norikazu Fujii

Mamoru Endo

Hiroyuki Kimura

Michiyou Kuriyama

Akiyoshi Tsuchida

Naoto Watanabe

Provided is a silica glass disc in which the deformation amount thereof in heat treatment is minimized, and the surface area of a silica glass surface can be increased. There is provided a silica glass disc, including a dimple forming area in which a large number of dimples are formed on at least one of a front surface or a back surface of a silica glass body, and the dimples in the dimple forming area are regularly formed. It is preferred that the dimples be formed by a laser.

Silica glass disc having dimples formed thereon

An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mmper 100 cm.

Quartz glass body having improved resistance against plasma corrosion, and method for production thereof

A member for a plasma etching device, comprising a coating film of yttrium oxide or YAG having a coating film thickness of 10 &#x3bc;m or more, a coating film thickness variance of 15% or less, preferably a surface roughness (Ra) of 1 &#x3bc;m or less, formed on a surface of a member, comprising quartz glass which contains 1 to 10% by weight of yttrium oxide or YAG. The member for a plasma etching device has high plasma resistance, is not subjected to an abnormal etching on the basis of a partial change of electric properties and, accordingly, can be used for a long period of time. Even when the member is large enough to handle 12-inch Si wafers, the above-described advantageous properties are maintained and the member can be used for a long period of time.

Member for plasma etching device and method for manufacture thereof

An object of the present invention is to provide a quartz glass jig, which, when employed in a processing apparatus using plasma, is less in generation of abnormal etching and particles and low in contamination with impurities. This object is obtained by a quartz glass jig for a processing apparatus using plasma, wherein a surface of the jig is subjected to grinding or a sandblast processing and has a surface roughness Rin the range of from 2 &#x3bc;m to 0.05 &#x3bc;m, and microcracks of grinding marks formed during the grinding or sandblast processing have a depth of 50 &#x3bc;m or less.

Quartz glass jig for processing apparatus using plasma

An object of the present invention is to provide a fluororesin-coated quartz glass jig free from peeling off of fluororesin coating on using hydrofluoric acid or from generating particles due to the etching of quartz glass, while yet preventing the generation of chipping by relaxing the impact imposed on the quartz glass by silicon wafers. It also is an object of the present invention to provide a production method of the fluororesin-coated quartz glass jig. The object above is achieved by a fluororesin-coated quartz glass jig the surface thereof is wholly covered with a pinhole-free fluororesin coating, and by a method for producing the same.

Fluororesin-coated quartz glass jig and method for producing the same

Plasma resistant quartz glass jig

A quartz glass member for use in dry etching, wherein at least the inner surface of the member to be brought into contact with plasma is constructed of synthetic quartz glass, and a dry etching system equipped with the same member. A dry etching system equipped with the quartz glass member, which minimizes the generation of particles and which prevent a drop in electrical characteristics from occurring on the silicon wafer.

Quartz glass member for use in dry etching and dry etching system equipped with the same

A quartz glass jig having large irregularities on the surface thereof, wherein said irregularities have a center line roughness Ra in the range of from 2 to 30 &mgr;m, a maximum height Rmax in the range of from 10 to 150 &mgr;m, and a width in the range of from 10 to 500 &mgr;m, and by a method which comprises forming an inorganic thin film on the surface of a quartz glass jig free from microcracks and having fine irregularities on the surface thereof and thereafter rinsing it a plurality of times.

Quartz glass jig having large irregularities on the surface and method for producing the same

Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and cooling after maintaining at the above temperature.

High purity opaque silica glass

Method of producing cristobalite containing silica glass

A process for producing opaque silica glass in which a quartz raw material grain having a particle size of 10 to 350 .mu.m is filled into a heat resistant mold, the quartz raw material grain is heated in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50.degree. to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-increase speed not exceeding 50.degree. C./minute, then, slowly heated up to a temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and the heated quartz raw material grain is further maintained at the temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted, followed by cooling down to the room temperature. Especially, in the case of producing a large scale opaque silica glass block, a quartz raw material grain filled into a heat-resistant mold is heated by a belt-like heating source located perpendicularly to a trunk of a filling layer of the quartz raw material grain so as to form a moving heating zone in the filling layer and the heating zone is successively moved either upwardly starting at the lower end portion of the filling layer or downwardly starting at the upper end portion thereof in a non-oxidizing atomosphere.

Process for producing opaque silica glass

A synthetic quartz glass optical member for an ultraviolet laser, where the quartz glass has a hydroxyl content of 10-100 ppm, a chlorine content of 200 ppm or less, a hydrogen content of 1.times.10.sup.16 molecules/cm.sup.3 or less, a homogeneity of refractive index of 5.times.10.sup.-6 or less in terms of .DELTA.n, and a birefringence of 5 nm/cm or less.

Optical member of synthetic quartz glass for excimer lasers and method

This invention relates to an optical member made of highly transparent, high-purity synthetic silica glass, to a method for manufacturing a blank or an optical member of such glass, and to the optical members themselves. The optical members have an absolute refractive index, n.sub.d, of 1.460 or more and a hydrogen molecule concentration of at least 5.times.10.sup.16 molecules/cm.sup.3 uniformly distributed throughout the glass and are particularly well suited for use in apparatus in which they are exposed to a high-power laser beam such as that produced by an excimer laser.

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Tokorozawa, Japan

Kyoichi Inaki