Ushio Denki Kabushiki Kaisha

Gigaphoton Inc.

Komatsu Corporation

Fujitsu Component Limited

Tokyo Institute of Technology

Kyohei Seki

Shinji Suzuki

Osamu Wakabayashi

Tatsuya Ariga

Masaki Yoshioka

Yoichi Mizukawa

Koki Sato

Koichi Kiryu

Tetsuji Arai

Masaki Inoue

Tetsugaku Tanaka

Taku Sumitomo

Hironobu Yabuta

Tetsuya Kitagawa

Takahiro Shirai

Takao Kobayashi

Keita Kanazu

Kazuaki Hotta

Nobutoshi Ebashi

Hiroshi Mizokoshi

Tomonao Hosokai

A connector to be connected to another connector includes a fixed contact, a movable contact, a housing having an opening into which the other connector is insertable, a switch that is movable in a direction in which the other connector is inserted, a cam that is rotatably supported and includes a first cam and a second cam, and a card that moves the movable contact. The connector is configured such that when the other connector is inserted into the connector, the switch is pushed and moved by the other connector, the first cam is pushed by the switch and the cam rotates, the second cam pushes the card when the cam rotates, and the card moves the movable contact to contact the fixed contact.

Connector

A heating device of the light irradiation type having an article to be heated, a guard ring located on the periphery of that article, multiple lamps located above the article to be heated and the guard ring, and a reflecting mirror located above the lamps, in which a light diffusion part is located in the upper region corresponding to the article to be heated so that the diffused light projects onto the entire surface of the article to be heated. The light diffusion part can be formed, for example, on a reflecting mirror, an optically transparent window part located between the article to be heated and the lamps or a light diffusion area formed on the light-emitting bulbs of the lamps. The size of the region occupied by the light diffusion part is such that diffused light is not projected to the guard ring.

Heating device of the light irradiation type

A light irradiation heating process in which, even in the case of an asymmetrical physical property of an article to be treated, uniform heating is possible, or in which heating can be performed such that the article acquires a desired physical property after heat treatment. Based on the measured value of the local physical property of the article to be treated, the emissivity distribution is obtained and the distribution pattern of the light intensity on the article to be treated is determined. According to this light intensity pattern, the individual intensity of the light emitted from respective light emitting parts of lamp units of the heating device are determined beforehand. According to this determined result, the intensity of the light emitted from the respective light emitting parts of the lamp units are controlled individually, and thus, the article to be treated is irradiated with light.

Heating process of the light irradiation type

To devise a heating device of the light irradiation type in which costs can reduced by reducing the number of filament lamps and current source parts without adversely affecting the illuminance distribution with respect to a wafer, in a heating device of the light irradiation type that has a light source part, in which several filament lamps are located parallel to one another, in which at least one of the filament lamps has several filaments which are located along the bulb axis are supplied with power individually to produce light which is irradiated from the light source parts onto an article to be treated, the distance between at least some of the adjacent filament lamps to one another is nonuniform.

A heating device in which uniform heating of an article to be processed is possible even in the case a temperature change which leads to a loss of the uniformity of the temperature distribution in a narrowly delineated area, and in which a reduction in the size of the device is possible. The heating device has a plurality of heaters, each heater having a single bulb of transparent material in which there is a filament that is divided in the axial direction into several filament parts and the respective filament parts are supplied with power independently of each other.

Heater and heating device with heaters with lamps having an independently powered multiple part filament

An EUV radiation source device with a chamber that is divided into a discharge space and a collector mirror space provided with EUV collector optics. Between them, an aperture component with an opening which is cooled is provided. First and second discharge electrodes are rotated. Sn or Li is irradiated with a laser. Pulsed power is applied between the first and second discharge electrodes to form a high density and high temperature plasma between the two electrodes so that EUV radiation with a wavelength of 13.5 nm is emitted, is focused by the EUV collector optics and is guided into the irradiation optical system of an exposure tool. There are a first pumping device and a second pumping device for pumping the discharge space and the collector mirror space. The discharge space is kept at a few Pa, and the collector mirror space is kept at a few 100 Pa.

Extreme UV radiation source device

To effectively eliminate radiation outside the band with a wavelength of 13.5 nm which has adverse effects on exposure without reducing the intensity of the EUV radiation with a wavelength of 13.5 nm, in an extreme UV radiation exposure tool which has an extreme UV radiation source device with an EUV focusing mirror which focuses extreme UV radiation and radiation outside the band which is emitted by the high density and high temperature region of a plasma, an illumination optical system for projecting this radiation onto a mask, and a projection optical system which projects the radiation from the mask onto a workpiece, a radiation shield is provided of a size which enables the radiation emerging from the EUV focusing mirror to be completely incident on it, and which has an opening of a size which results in essentially only extreme UV radiation being transmitted through it.

Extreme UV radiation exposure tool and extreme UV radiation source device

To suppress the adherence of debris as a result of a radiating fuel, such as tin or the like, within a vessel for forming high density and high temperature plasma of an extreme UV radiation source device, and to eliminate deposited tin and/or tin compounds with high efficiency, hydrogen radical producing parts are provided in the vessel; and hydrogen radicals are produced in the vessel so that deposition of tin and/or a tin compound is suppressed in the area with a low temperature of the device, such as a focusing mirror or the like, and the deposited tin and/or tin compound is eliminated.

Extreme UV radiation source device and method for eliminating debris which forms within the device

In a line-narrowed gas laser system such as a line-narrowed molecular fluorine laser system, ASE is cut off to obtain a spectral linewidth of 0.2 pm or lower and a spectral purity of 0.5 pm or lower. The laser system comprises a laser chamber filled with an F-containing laser gas, discharge electrodes located in the laser chamber, a laser resonator and a line-narrowing module located in the laser resonator with a wavelength selection element, so that a line-narrowed laser beam emerges from the laser resonator. To cut off ASE from the laser beam emerging from the laser resonator, the duration from laser emission by discharge to generation of a laser beam is preset. Rise of the sidelight is made so gentle that the starting point of a laser pulse can exist after the time of the first sidelight peak.

Line-narrowed gas laser system

The present invention relates to a two stage laser system in which a desired spectral line width can be obtained at high output even when the integrated spectral characteristic of oscillator laser does not have the desired spectral line width, comprising an oscillator laser devicewhich has discharge electrodeswithin a laser chamberfilled with laser gas containing Fand emits laser beam which is band-narrowed by means of a band narrowing modulearranged in a laser resonator, and an amplifier laser devicewhich has discharge electrodeswithin a laser chamberfilled with laser gas containing Fand amplifies laser pulse injected from said oscillator laser deviceIn the system, a synchronous time interval having a predetermined spectral line width exists in laser pulse from the oscillator laserand the system is set such that a discharge occurs in the amplifier laserwithin the synchronous time interval.

Two stage laser system

The present invention relates to a wavelength monitoring apparatus capable of measuring both standard light and laser light for semiconductor exposure simultaneously and highly accurately, without a time lag. Entrance-side optical systems and allow light from a laser for semiconductor exposure and reference light from a He&mdash;Ne laser to be incident on different areas of a single etalon in the form of diverging light, converging light or diffused light in such a manner that the respective center axes thereof are displaced relative to each other. Two focusing optical systems and are provided in approximately coaxial relation to the respective center axes of the laser light and reference light passing through the etalon A one-dimensional array optical sensor is placed in a plane P coincident with the back focal planes of the focusing optical systems and to receive interference fringes produced by the laser light and the reference light. The positions of the interference fringes on the one-dimensional array optical sensor are detected to calculate the wavelength of the laser light for semiconductor exposure.

Wavelength monitoring apparatus for laser light for semiconductor exposure

The object of the invention is to provide an ashing method and an asher in order to avoid damage to semiconductor components occurring during ashing of a photoresist resin film by active oxygen plasma and to avoid a long treatment time occurring in an ashing method using a low pressure mercury discharge lamp. According to the invention, this object is achieved by a method and an apparatus for ashing a photoresist resin film. In the method, a wafer provided with a photoresist resin film is placed in an ozone-containing atmosphere. An activated oxygen is produced through the radiation light of a discharge lamp, which emits a continuous spectrum in a wavelength range of 200 to 300 nm. The photoresist resin film is ashed by the activated oxygen.

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Himeji, Japan

Kyohei Seki