Sony Corporation

Kyohei Mizuta

Yohei Chiba

Tomokazu Ohchi

Yoshiaki Masuda

Keishi Inoue

Kazuichiro Itonaga

Kazufumi Watanabe

Hirohisa Uchida

Hideki Kobayashi

Nobutoshi Fujii

Kaoru Koike

Takuya Maruyama

Yukihiro Ando

Hirotaka Yoshioka

Osamu Oka

Akira Shinozaki

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

Solid state imaging apparatus, production method thereof and electronic device

The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

Imaging device, method of manufacturing imaging device, and electronic device

Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

Solid-state imaging device and method for producing the same, and electronic apparatus

The present disclosure relates to a solid-state imaging element capable of suppressing stray light with respect to a charge storage unit such as an FD, and an electronic device. According to an aspect of the present disclosure, a solid-state imaging element constituted by many pixels includes a photoelectric conversion unit formed for each of the pixels and that converts incident light into a charge; a charge storage unit that temporarily holds the converted charge; and a first light shielding unit formed between the pixels and having a predetermined length in a thickness direction of a substrate. The charge storage unit is formed below a cross portion where the first light shielding unit formed between pixels adjacent to each other in a longitudinal direction crosses the first light shielding unit formed between pixels adjacent to each other in a lateral direction. The present disclosure can be applied to, for example, a backside irradiation type CMOS image sensor.

Solid-state imaging element and electronic device

The present disclosure relates to a solid-state image device, a method for manufacturing the solid-state image device, and an electronic device that are capable of reducing uneven application of a color filter. A color filter and a plurality of connection unit areas are formed on a sensor board. At least one of the connection unit areas is placed a predetermined interval away from the other connection unit areas. The present disclosure can be applied, for example, to a backside illumination CMOS image sensor with a layer structure, a front-side illumination CMOS image sensor with a layer structure, or a CCD image sensor.

Solid-state image device and method for manufacturing solid-state image device, and electronic device

There is provided a solid-state imaging device including a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer, a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate, a connection unit region in which a connection section is provided, the connection section having a first through electrode, a second through electrode, and a connection electrode connecting the first through electrode and the second through electrode, and an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.

Solid-state imaging device, method of manufacturing solid-state imaging device, apparatus for manufacturing semiconductor device, method of manufacturing semiconductor device, and electronic device

A solid state imaging device is described that includes a semiconductor substrate having a plurality of photodiodes thereon. The solid state imaging device further includes a first wiring portion, a second wiring portion and a third wiring portion. The device further includes a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions. Additionally, a second wiring layer is disposed over the first wiring layer and which extends across the first wiring portion and the second wiring portion.

Growing community of inventors

Kumamoto, Japan

Kyohei Mizuta