Denso Corporation

Kyohei Kotake

Bahman Hossini Soltani

Manabu Tomisaka

Yasuo Ishihara

Tetsuji Yamaguchi

Shusaku Nakazawa

Shinji Mukota

Yuya Kato

Naoki Maruno

Kazufumi Aoki

Provided is a surface processing apparatus and a surface processing method for a SiC substrate using anodization. The surface processing apparatus for the SiC substrate includes a surface processing pad and a power supply device. The surface processing pad includes a grinding wheel layer. The grinding wheel layer is disposed facing a workpiece surface of the SiC substrate. The power supply device passes a pulsed current having a period greater than 0.01 seconds and less than or equal to 20 seconds for anodizing the workpiece surface to be processed by the grinding wheel layer through the SiC substrate as an anode in the presence of an electrolyte.

Surface processing apparatus and surface processing method for SiC substrate

Growing community of inventors

Kariya, Japan

Kyohei Kotake