Ngk Insulators, Inc.

Kyohei Atsuji

Yuji Katsuda

Noboru Nishimura

Asumi Nagai

Hirofumi Yamaguchi

Takahiro Tomita

Shinji Suzuki

Keita Miyanishi

Soichiro Aoyagi

Shinpei Oshima

A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO.

Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

A silicon carbide porous body contains β-SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of the β-SIC particles is not smaller than 15 μm. The content of the Si particles is not lower than 10 mass %. The maximum particle diameter of the Si particles is not larger than 40 μm. Further, an oxide coating film having a thickness not smaller than 0.01 μm and not larger than 5 μm is provided on surfaces of the Si particles.

Silicon carbide porous body, honeycomb structure, electrically heated catalyst, and method of manufacturing silicon carbide porous body

The composite sintered body includes AlO, and MgAlO. The content of AlOin the composite sintered body is not less than 95.5% by weight. The average sintered grain size of AlOin the composite sintered body is not less than 2 μm and not greater than 4 μm. The standard deviation of sintered grain size distribution of AlOin the composite sintered body is not greater than 0.35. The bulk density of the composite sintered body is not less than 3.94 g/cmand not greater than 3.98 g/cm. In the composite sintered body, the ratio of amount of crystal phase of MgAlOto that of AlOis not less than 0.003 and not greater than 0.01.

Composite sintered body, semiconductor manufacturing apparatus member, and method of manufacturing composite sintered body

A composite sintered body contains a silicon phase which is a main phase, a cordierite phase, and an amorphous phase containing Si. Further, the volume resistivity thereof at a room temperature is not lower than 0.1 &#x3a9;&#xb7;cm and not higher than 2.5 &#x3a9;&#xb7;cm.

Composite sintered body, honeycomb structure, electrically heated catalyst, and method of manufacturing composite sintered body

A composite sintered body includes a base material that contains AlOas a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO, and AlO.

Composite sintered body, semiconductor manufacturing apparatus member and method of producing composite sintered body

A composite sintered body includes a base material (i.e., a main body) using ceramics as a main material and an electrode disposed inside the main body or on a surface thereof. The electrode contains WC and TiN. It is thereby possible to reduce the difference in thermal expansion coefficient between the electrode and the main body while suppressing an increase in the resistivity of the electrode. As a result, it is possible to suppress any damage such as a crack, a breakage, or the like of the main body, which is caused by the difference in the thermal expansion coefficient.

Composite sintered body and method of manufacturing composite sintered body

A sintered compact includes an alumina phase as a primary phase, and further includes an amorphous phase containing Si and Mn and a cordierite phase. The sintered compact has a porosity of higher than or equal to 1.1% and less than or equal to 5.0%. Preferably, I1/(I1+I2) is greater than or equal to 0.20 and less than or equal to 0.45, where I1 is the strength of the main peak of cordierite obtained by an XRD method, and I2 is the strength of the main peak of alumina.

Sintered compact, circuit component, and method of producing sintered compact

A ceramic structureincludes a heater electrodewithin a disk-shaped AlN ceramic substrate. The heater electrodecontains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |&#x394;CTE| between a thermal expansion coefficient of the AlN ceramic substrateand a thermal expansion coefficient of the heater electrodeat a temperature in the range of 40&#xb0; C. to 1000&#xb0; C. is 0.35 ppm/&#xb0; C. or less.

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Nagoya, Japan

Kyohei Atsuji