Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Corning Co., Ltd.

Kyo-yeol Lee

Jae-woo Chung

Hwa-sun Lee

Joon-seop Kwak

Seung-mo Lim

Jae-Hee Cho

Su-hee Chae

Jae-Chang Lee

Tae-kyung Lee

Joo-Hyun Lee

Yoon-Ho Khang

Eun-Hye Lee

Chang-youl Moon

Jong-Heun Lee

Seong-il Im

Tae-kyun Lee

Eun-hyu Lee

A method of forming a piezoelectric actuator on a vibration plate to provide a driving force to each of a plurality of pressure chambers includes forming a lower electrode on the vibration plate, forming a piezoelectric layer on the lower electrode at a position corresponding to each of the pressure chambers, forming a supporting pad on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, forming an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad, and bonding the upper electrode to a driving circuit above the supporting pad to receive a voltage from the driving circuit.

Method of forming a piezoelectric actuator of an inkjet head

A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material

An inkjet printhead and a method of driving the inkjet printhead include a flow channel substrate having a pressure chamber, and a piezoelectric actuator formed on the flow channel substrate to apply a driving force to the pressure chamber to eject ink. The piezoelectric actuator includes a piezoelectric layer formed on the flow channel substrate to correspond to the pressure chamber, and a plurality of common electrodes and a plurality of driving electrodes alternately arranged in a length direction of the piezoelectric layer.

Inkjet printhead having piezoelectric actuator and method of driving the piezoelectric actuator

A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.

Piezoelectric actuator inkjet head and method of forming the same

A method to form a thick layer by screen printing and a method to form a piezoelectric actuator of an inkjet head. The method to form the thick layer including forming a guide groove in a surface to a predetermined depth, and forming the thick layer by applying a material to the surface inside the guide groove through screen printing. The method to form the piezoelectric actuator including forming an insulating layer on a top surface of a vibration plate and forming a guide groove in the top surface of the vibration plate or an insulating layer to a predetermined depth at a position corresponding to each of a plurality of pressure chambers, forming a lower electrode on the top surface of the insulating layer; forming a piezoelectric layer inside the guide groove by screen printing, and forming an upper electrode on a top surface of the piezoelectric layer.

Method of forming thick layer by screen printing and method of forming piezoelectric actuator of inkjet head

Provided is a pyrolysis furnace having a gas flowing path controller with an improved structure. The pyrolysis furnace includes: a silicon substrate; a main body of the pyrolysis furnace; a heating unit that is formed around the main body and controls the temperature of the main body; at least one gas supplying tube through which a gas flows into the main body; and a gas flowing path controller that is installed inside the main body and controls the flow of the gas. As a result, controlling and manufacturing of small-sized nanoparticles with excellent characteristics is possible.

Pyrolysis furnace having gas flowing path controller

A method of forming a piezoelectric actuator of an inkjet head formed on a vibrating plate to provide a driving power for ejecting ink to each of pressure chambers is provided. The method includes forming a lower electrode on a vibrating plate, forming a piezoelectric layer on the lower electrode to be located above each of pressure chambers, forming a protecting layer covering the lower electrode and the piezoelectric layer, exposing an upper surface of the piezoelectric layer by decreasing a thickness of the protecting layer and the piezoelectric layer, forming an upper electrode on the upper surface of the piezoelectric layer, removing the protecting layer. According to the present invention, since the piezoelectric layer having a flat upper surface is formed in uniform figure, area and thickness of the upper electrode formed thereon is uniformly controlled.

Method of forming piezoelectric actuator of inkjet head

The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core/shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.

Nanoparticle electroluminescence and method of manufacturing the same

GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.

Nonvolatile memory device and method of manufacturing the same

Provided is a compound semiconductor substrate fabrication method involving: preparing a base substrate; forming a first buffer layer on the prepared base substrate; forming a semiconductor layer on the first buffer layer; and removing the base substrate.

Method for fabricating group III-V compound semiconductor substrate

A method for fabricating a semiconductor light emitting device is provided. The method involves: forming a light emitting construct including a p-type electrode on a n-type substrate; etching a bottom surface of the n-type substrate; and forming an n-type electrode on the etched bottom surface of the n-type substrate. The bottom surface of the n-type substrate is wet or dry etched. The bottom surface of the n-type substrate is free from damage so that stable attachment of the etched bottom surface of the n-type substrate is ensured with improved properties of the light emitting device which may be a semicoductor laser diode.

Method for fabricating semiconductor light emitting device

An air-to-fuel (A/F) ratio sensor includes an insulation layer, two solid electrolyte layers made of a porous composite ceramic formed at both sides of the insulation layer, each solid electrolyte layer having an internal electrode layer on its boundary surface with the insulation layer and an external electrode layer on its other surface, and a diffusion barrier layer made of a porous composite ceramic, covering one of the external electrode layers. The A/F ratio sensor provides a linear A/F ratio signal by controlling only a pumping current for a reference partial pressure of oxygen. Thus, the A/F ratio sensor operates by a simpler driving principle, thereby simplifying the driving circuit thereof.

Growing community of inventors

Yongin-si, South Korea

Kyo-yeol Lee